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0.4v s Datasheet PDF File

For 0.4v s Found Datasheets File :: 50812 Search Time::1.75ms
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				INTERSIL[Intersil Corporation]
Part No.	ICM7228 ICM7228AIBI ICM7228AIJI ICM7228AIPI ICM7228AMJI883B ICM7228BIBI ICM7228BIJI ICM7228BIPI ICM7228BMJI883B ICM7228CIBI ICM7228CIJI ICM7228CIPI ICM7228CMJI883B ICM7228DIBI ICM7228DIJI ICM7228DIPI ICM7228DMJI883B FN3160
OCR Text	...sEG b 3 DP 4 DA0 (DIGIT ADDREss 0) 5 DA1 (DIGIT ADDREss 1) 6 ID7 (INPUT DP) 7 WRITE 8 HEXA/CODE B/sHUTDOWN 9 28 Vss 27 sEG a 26 sEG g 25 sEG...4V, VIH = +2.4V Write Pulsewidth (Low), tWL Write Pulsewidth (High), tWH Mode Hold Time, tMH Mode se...
Description	CA-BAYONET 8-Digit, Microprocessor- Compatible, LED Display Decoder Driver 8-Digit, Microprocessor-Compatible, LED Display Decoder Driver 8-Digit Microprocessor- Compatible LED Display Decoder Driver From old datasheet system
File Size	98.73K / 17 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2110 IR2110PBF IR2110s IR2110sPBF IR2113PBF IR2113s IR2113sPBF
OCR Text	...d DIP) (16 lead sOIC) Min. -0.3 -0.3 VB - 25 Vs - 0.3 -0.3 -0.3 -0.3 VCC - 25 Vss - 0.3 -- -- -- -- -- -- -55 -- Max. 525 625 VB + 0...4V to -VBs. (Please refer to the Design Tip DT97-3 for more details). Note 2: When VDD < 5V, the min...
Description	HIGH AND LOW sIDE DRIVER
File Size	218.79K / 16 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	0.45 and 0.68 Ohm, N-Channel Power MOsFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...4V 0 0 25 50 75 100 VDs, DRAIN TO sOURCE VOLTAGE (V) 125 VGs = 5V IRF234, IRF235 100 10 VDs, D...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOsFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOsFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, si, POWER, MOsFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305s
OCR Text	...l D VDss = -55V RDs(on) = 0.06 G ID = -31A s Fifth Generation HEXFETs from International Rectifier utilize advanced processi...4V V D s = -2 8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A ...
Description	Power MOsFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOsFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...d D VDss = -55V RDs(on) = 0.06 G ID = -31A s Description Fifth Generation HEXFETs from International Rectifier utilize adva...4V V D s = -2 8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A ...
Description	Power MOsFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	0.150 Ohm, P-Channel Power MOsFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOsFET de...4V VGs = 6V VGs = 5V 1 0 0 -10 -20 -30 -40 -50 VDs, DRAIN TO sOURCE VOLTAGE (V) FIGURE 4...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOsFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	0.600 Ohm, P-Channel Power MOsFET This advanced power MOsFET is designed, tested, and guaranteed to withstand a specified level of energy i...4V 0 0 -10 -20 -30 -40 VDs, DRAIN TO sOURCE VOLTAGE (V) -50 FIGURE 4. FORWARD BIAs sA...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOsFET(6A, 100V, 0.600 惟, P娌?????MOs?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOsFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOsFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1s9540sM FN2282
OCR Text	0.200 Ohm, P-Channel Power MOsFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe...4V -40 -50 1 VDs, DRAIN TO sOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAs sAFE OPERATING AREA ...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, si, POWER, MOsFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOsFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, si, POWER, MOsFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOsFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...620 -200 -200 -3.5 -2 -14 20 40 0.32 290 -55 to 150 300 260 UNITs V V A A A V W W/oC mJ oC oC oC Drain to source Breakdown Voltage (Note...4V 0 0 -10 -20 -30 -40 -50 -0.1 -1 VDs, DRAIN TO sOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAs ...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOsFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOsFET 3.5A 200V 1.500 Ohm P-Channel Power MOsFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...l D VDss = -55V RDs(on) = 0.175 G ID = -12A s Fifth Generation HEXFETs from International Rectifier utilize advanced process...4V V Ds = -2 8V 16 C , C a p a c ita n c e (p F ) 500 C is s C os s 400 12 300 ...
Description	-55V single P-Channel HEXFET Power MOsFET in a TO-220AB package Power MOsFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

For 0.4v s Found Datasheets File :: 50812 Search Time::1.75ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |