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  0.600v Datasheet PDF File

For 0.600v Found Datasheets File :: 15753    Search Time::1.344ms    
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    IRS2301 IRS2301SPBF IRS2301STRPBF

International Rectifier
Part No. IRS2301 IRS2301SPBF IRS2301STRPBF
OCR Text ...ide floating absolute voltage -0.3 625 v s high-side floating supply offset voltage v b - 25 v b + 0.3 v ho high-side floating o...600v i qbs quiescent v bs supply current 60 160 260 i qcc quiescent v cc supply current ...
Description Floating channel designed for bootstrap operation

File Size 320.68K  /  15 Page

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    IRGP4620D-EPBF IRGP4620DPBF IRGS4620DTRLPBF IRGS4620DTRRPBF IRGS4620DPBF IRGB4620DPBF

International Rectifier
Part No. IRGP4620D-EPBF IRGP4620DPBF IRGS4620DTRLPBF IRGS4620DTRRPBF IRGS4620DPBF IRGB4620DPBF
OCR Text ...nk (flat, greased surface) ??? 0.50 ??? r ja thermal resistance, junction-to-ambient (pcb mount - d 2 pak) ? ??? 40 ??? r jc (...600v ? 475 ? v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 1...
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

File Size 719.22K  /  14 Page

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    HGTG12N60C3D

Harris, Corp.
Fairchild Semiconductor
HARRIS[Harris Corporation]
Part No. HGTG12N60C3D
OCR Text ... 12 15 96 20 30 24A at 600V 104 0.83 -40 to 150 260 4 13 UNITS V A A A A V V W W/oC oC oC s s Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Conti...
Description 36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的,的ufs系列N沟道IGBT的与反平Hyperfast二极
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 102.34K  /  7 Page

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Part No. IRGC5B60KB
OCR Text ...) 99% al/1% si, (4m) dimensions 0.090" x 0.115" wafer diameter 150mm, with std. < 100 > flat wafer thickness, tolerance 85m, +/- 7m relevant...600v min t j = 25c, i ces = 1ma, v ge = 0v v ge(th) gate threshold voltage 3.5v min, 5.5v max v g...
Description 600 V, N-CHANNEL IGBT

File Size 14.96K  /  1 Page

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    IPP60R330P6

Infineon Technologies AG
Part No. IPP60R330P6
OCR Text ...in current 1) i d - - - - 12.0 7.6 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 33 a t c =25c avalanche energy, single p...600vcoolmos?p6powertransistor ipw60r330p6,ipp60r330p6,ipa60r330p6 rev.2.1,2013-12-05 final ...
Description LED Driver IC and Lighting IC

File Size 2,868.58K  /  18 Page

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    HAOHAI
Part No. H1N60U H1N60D
OCR Text ...pulse avalanche energy e as 4.0 * i d t c =100 t c =25 1.0 * 0.6 * t stg -55~+150 ?? junction temperature t j 150 1n60 haohai ? continu...600v, n ? ? n-channel mosfet ? ? i dm 24kpcs 25kpcs fqu1n60c fqd1n60c h1n60u h1n60d ?? ?? ? h ...
Description N-Channel MOSFET

File Size 376.89K  /  6 Page

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    PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120
OCR Text 0 Introduction to Intelligent Power Modules (IPM) Mitsubishi Intelligent Power Modules (IPMs) are advanced hybrid power devices that combine...600V to 800A 1200V. The power semiconductors used in these modules are based on the field proven H-S...
Description USING INTELLIGENT POWER MODULES
FLAT-BASE TYPE INSULATED PACKAGE

File Size 922.36K  /  31 Page

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    PP225D060

POWEREX[Powerex Power Semiconductors]
Part No. PP225D060
OCR Text ... 96 Min 20 14.4 12 Typ 24 15 15 0 337.5 98 460 See Figure Below See Figure Below See Figure Below 100 2 Max 30 18 Units Volts Volts Volts Vo...600V TM Half Bridge IGBT Assembly Gate Drive Board Interface Signal Definitions Pin 1 2 3 4 ...
Description POW-R-PAK 200A / 1200V 3 phase IGBT Assembly

File Size 360.12K  /  6 Page

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