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  10-18ghz Datasheet PDF File

For 10-18ghz Found Datasheets File :: 337    Search Time::1.203ms    
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    TC1606

Transcom, Inc.
Part No. TC1606
OCR Text ... voltage at v ds = 2 v, i d = 10 ma -1.7** vo l t s bv dgo drain-gate breakdown voltage at i dgo = 2.5 ma 18 22 vo l t s r...18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75...
Description 2W High Linearity and High Efficiency GaAs Power FETs

File Size 145.64K  /  4 Page

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    EFA025A

Excelics Semiconductor, Inc.
Part No. EFA025A
OCR Text ...typical 1.5 db noise figure and 10 db associated gain at 12 ghz 0.3 x 250 micron recessed mushr oom gate si 3 n 4 passivation ...18ghz 19 21 dbm gain at 1db compression f=12ghz 11 g 1db vds=8...
Description 6-12V low distortion GaAs power FET

File Size 32.78K  /  3 Page

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    EFA018A

Excelics Semiconductor, Inc.
Part No. EFA018A
OCR Text ... typical 1.1db noise figure and 10.5db associated gain at 12ghz 0.3 x 180 micron recessed mushroom gate si 3 n 4 passivation a...18ghz 16.5 18.5* 18.5* dbm g 1db gain at 1db compression f=12ghz vds=6v, ids=50% idss f=1...
Description Low Distortion GaAs Power FET

File Size 99.47K  /  2 Page

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    CCR-33S3O-T CCR-33 CCR-33S1C-N CCR-33S1C-R CCR-33S1C-T CCR-33S1O-N CCR-33S1O-R CCR-33S1O-T CCR-33S2C-N CCR-33S2C-R CCR-3

Teledyne Technologies, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CCR-33S3O-T CCR-33 CCR-33S1C-N CCR-33S1C-R CCR-33S1C-T CCR-33S1O-N CCR-33S1O-R CCR-33S1O-T CCR-33S2C-N CCR-33S2C-R CCR-33S2C-T CCR-33S2O-N CCR-33S2O-R CCR-33S2O-T CCR-33S3C-N CCR-33S3C-R CCR-33S3C-T CCR-33S3O-N CCR-33S3O-R
OCR Text ...hen perhaps the CCM-33 Range of 10 Million cycle switches would be of interest. Temperature Range: -25O C to +65O C (Operating) Shock: Vi...18GHz SPDT Switch Indicators TTL Analog H = 1.30 MAX. STD MODEL H = 1.80 MAX. TTL MODEL ...
Description Miniature DC-18GHz SPDT Switch 微型DC - 18GHz SPDT开

File Size 190.91K  /  2 Page

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    TC2481

Transcom, Inc.
Part No. TC2481
OCR Text ... 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 18ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -1...
Description 0.5 W Low-Cost Packaged PHEMT GaAs Power FETs

File Size 199.67K  /  4 Page

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    EPA120B-100P

Excelics Semiconductor, Inc.
Part No. EPA120B-100P
OCR Text 10/30/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. ...18ghz 29.0 dbm 8.5 10.0 g 1db gain at 1db compression f= 12ghz v ds ...
Description High Efficiency Heterojunction Power FET

File Size 88.79K  /  2 Page

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    FMM5805X

Eudyna Devices Inc
Part No. FMM5805X
OCR Text ...G Pin Tstg Top Condition Rating 10 -3.0 22 -65 to +175 -40 to +85 Unit V V dBm C C Fujitsu recommends the following conditions for the lo...18GHz IM3 -25 -30 IMD (dBc) -35 -40 -45 -50 -55 -60 -65 12 14 16 18 20 22 24 26 28 30 20GHz IM5 ...
Description 17.5-20GHz Power Amplifier MMIC

File Size 2,126.07K  /  4 Page

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    FMM5804X

Eudyna Devices Inc
Part No. FMM5804X
OCR Text ...n Tstg Tch Top Condition Rating 10 -3.0 16 -65 to +175 175 -40 to +95 Unit V V dBm C C C Fujitsu recommends the following conditions for ...18GHz P1dB 18GHz G1dB 31.5GHz P1dB 31.5GHz G1dB OUTPUT POWER vs. FREQUENCY VDD = 6V, IDD = 250mA...
Description 17.5-31.5GHz Power Amplifier MMIC

File Size 274.48K  /  4 Page

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    TC2182

ETC
List of Unclassifed Manufacturers
Part No. TC2182
OCR Text ...oise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS ...18GHz 0 3. 0 4. 0 5. 10.0 Mag Max 0.2 5 13 Swp Max 18 GHz 45 0.8 90 S12 75 ...
Description Low Noise Ceramic Packaged PHEMT GaAs FETs

File Size 99.98K  /  4 Page

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For 10-18ghz Found Datasheets File :: 337    Search Time::1.203ms    
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