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  1310 nm ingaasp mqw fp pulsed Datasheet PDF File

For 1310 nm ingaasp mqw fp pulsed Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508GK47 NX6508GK57 NX6508GH49

NEC
Part No. NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508GK47 NX6508GK57 NX6508GH49
Description ingaasp mqw-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
ingaasp mqw-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
ingaasp mqw-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
ingaasp mqw-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
ingaasp mqw-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).

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    ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725B8R

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725B8R
Description ingaasp- mqw fp laser diode
ingaasp-mqw-fp LASER DIODES
ingaasp - mqw - fp LASER DIODES

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    TCS450

MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
Part No. TCS450
Description 450 Watts, 45 Volts, pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (&#181;sec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR

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    SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N SBM52214N SBM52214Z SBM52414G SBM52414N SBM51414G SBM51414N SBM51414Z

INFINEON[Infineon Technologies AG]
Part No. SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N SBM52214N SBM52214Z SBM52414G SBM52414N SBM51414G SBM51414N SBM51414Z SBM51214Z
Description Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光,纳米接1310

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    PHI214-20EL PH1214-20EL

Tyco Electronics
MA-Com
Part No. PHI214-20EL PH1214-20EL
Description Radar pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
1200-1400 MHz,20 W, 2 ms pulse,radar pulsed power transistor

File Size 132.11K  /  2 Page

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    MA-Com
M/A-COM / Tyco Electronics
Part No. PH1214-25S
Description 1200-1400 MHz,25 W, 1 ms pulse,radar pulsed power transistor
Radar pulsed Power Transistor, 25W, lus Pulse, 10% Duty 1.2-1.4 GHz

File Size 137.74K  /  2 Page

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    PHI214-0851 PH1214-0.85L

Tyco Electronics
MA-Com
Part No. PHI214-0851 PH1214-0.85L
Description Radar pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz
1200-1400 MHz,0.85 W, 2 ms pulse,radar pulsed power transistor

File Size 132.63K  /  2 Page

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    PHL2143 PH1214-3L

Tyco Electronics
Velleman, Inc.
Part No. PHL2143 PH1214-3L
Description Radar pulsed Power Transistor3W
Radar pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
Radar pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管的3W毫秒脉冲0%的责任1日至1号吉

File Size 127.80K  /  2 Page

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    MACOM[Tyco Electronics]
Part No. PH1090-175L PH1090-175 PH1090
Description Avionics pulsed Power Transistor175 Watts锛?1030-1090MHz
Avionics pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250ms Pulse,
Avionics pulsed Power Transistor - 175 Watts 1030-1090 MHz 250ms Pulse
Avionics pulsed Power Transistor175 Watts1030-1090MHz

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    SBL51214G SBL51214N SBL51214Z SBL52214G SBL52214Z SBL52214N

Infineon Technologies A...
Infineon Technologies AG
http://
Part No. SBL51214G SBL51214N SBL51214Z SBL52214G SBL52214Z SBL52214N
Description    Low Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving

File Size 230.88K  /  11 Page

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For 1310 nm ingaasp mqw fp pulsed Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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