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  200a 800v Datasheet PDF File

For 200a 800v Found Datasheets File :: 602    Search Time::1.828ms    
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    FQA13N8007 FQA13N80F109

Fairchild Semiconductor
Part No. FQA13N8007 FQA13N80F109
OCR Text ...g TJ = 25C 3. ISD 12.6A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description 800v N-Channel MOSFET

File Size 830.05K  /  8 Page

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    FQA7N80C FQA7N80C07 FQA7N80CF109

Fairchild Semiconductor
Part No. FQA7N80C FQA7N80C07 FQA7N80CF109
OCR Text ...ing TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description 800v N-Channel MOSFET

File Size 795.07K  /  8 Page

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    G4PH50UD

International Rectifier
Part No. G4PH50UD
OCR Text ...nC TJ = 25C See Fig. 16 di/dt = 200a/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50UD 30 25 F ...800v 4.20 IC = 48 A 10 IC = 24 A IC = 12 A 3.80 3.40 3.00 0 10 20 30 40 50 ...
Description Search --To IRG4PH50UD

File Size 263.88K  /  10 Page

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    Infineon Technologies Corporation
Part No. SGP15N120
OCR Text ...IT COLLECTOR CURRENT 300A 250A 200a 150A 100A 50A 15V 0A 10V 30s tsc, SHORT CIRCUIT WITHSTAND TIME 20s 10s 0s 10V 11V 12V 13V 14V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short c...
Description Fast S-igbt in Npt-technology

File Size 490.07K  /  12 Page

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    FQA8N80C07 FQA8N80CF109 FQA8N80C-F109

Fairchild Semiconductor
Part No. FQA8N80C07 FQA8N80CF109 FQA8N80C-F109
OCR Text ...ng TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description 800v N-Channel MOSFET

File Size 789.60K  /  8 Page

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    FQA10N80C FQA10N80C07 FQA10N80CF109 FQA10N80C-F109

Fairchild Semiconductor
Part No. FQA10N80C FQA10N80C07 FQA10N80CF109 FQA10N80C-F109
OCR Text ...g TJ = 25C 3. ISD 10.0A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description 800v N-Channel MOSFET

File Size 803.12K  /  8 Page

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    8N80

Unisonic Technologies
Part No. 8N80
OCR Text ...ing TJ = 25C 3. ISD 8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Absolute maximum ratings are those values beyond which the device c...800v, VGS=0V 10 Drain-Source Leakage Current IDSS A VDS=640V, TC=125C 100 Gate- Source Leakage Curre...
Description 800v N-CHANNEL MOSFET

File Size 203.16K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N8006 FQA7N80_F109 FQA7N80 FQA7N80F109
OCR Text ...ng TJ = 25C 3. ISD 6.6A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description 800v N-Channel MOSFET

File Size 763.06K  /  9 Page

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    FQA10N8007 FQA10N80F109 FQA10N80-F109

Fairchild Semiconductor
Part No. FQA10N8007 FQA10N80F109 FQA10N80-F109
OCR Text ...ng TJ = 25C 3. ISD 9.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description 800v N-Channel MOSFET

File Size 800.07K  /  8 Page

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    IRG4PH50KDPBF IRG4PH50KDPBF-15

International Rectifier
Part No. IRG4PH50KDPBF IRG4PH50KDPBF-15
OCR Text ... Fig. 1838 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50KDPbF 30 F o r b o th : ...800v 960V V GE = 15V TJ = 25 C I C = 24A 100 5.0 RG = Ohm VGE = 15V 800v VCC = 960V IC ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
45 A, 1200 V, N-CHANNEL IGBT, TO-247AC

File Size 673.46K  /  11 Page

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