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GeneSiC Semiconductor, Inc.
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| Part No. |
GB05SLT12-252
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| OCR Text |
...alf sine wave i f,sm t c = 25 c, t p = 10 ms 32 a t c = 155 c, t p = 10 ms 26 non-repetitive peak forward current i f,max ...175 c electrical characteristics at t j = 175 c, unless otherwise specified parameter sy... |
| Description |
Silicon Carbide Power Schottky Diode
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| File Size |
353.92K /
5 Page |
View
it Online |
Download Datasheet
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|
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GeneSiC Semiconductor, Inc.
|
| Part No. |
GB05SLT12-220
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| OCR Text |
...alf sine wave i f,sm t c = 25 c, t p = 10 ms 32 a t c = 155 c, t p = 10 ms 26 non-repetitive peak forward current i f,max ...175 c electrical characteristics at t j = 175 c, unless otherwise specified parameter sy... |
| Description |
Silicon Carbide Power Schottky Diode
|
| File Size |
397.18K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
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