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  256mbit sdram 4m x 16bit x 4 b Datasheet PDF File

For 256mbit sdram 4m x 16bit x 4 b Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-

Samsung Semiconductor Co., Ltd.<br>SAMSUNG SEMICONDUCTOR CO. LTD.<br>SAMSUNG[Samsung semiconductor]<br>Samsung Electronic<br>
Part No. K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-xE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
Description 16M x 16 SYNCHRONOUS DRAM, 7 ns, PbGA54<br>16M x 16 SYNCHRONOUS DRAM, 5.4 ns, PbGA54<br>4m x 16bit x 4 banks Mobile sdram in 54bOC 4米16 × 4银行4bOC移动sdram<br>
File Size 112.21K  /  12 Page

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    K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S28163

Samsung Electronic<br>SAMSUNG[Samsung semiconductor]<br>SAMSUNG SEMICONDUCTOR CO. LTD.<br>Samsung Semiconductor Co., Ltd.<br>
Part No. K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
Description 8M x 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54<br>128Mbit sdram 2M x 16bit x 4 banks Synchronous DRAM LVTTL 128Mbit sdram00万16 × 4银行同步DRAM LVTTL<br>
File Size 111.68K  /  11 Page

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    K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45

Samsung Electronic<br>SAMSUNG SEMICONDUCTOR CO. LTD.<br>Samsung Semiconductor Co., Ltd.<br>
Part No. K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45 K4D551638D-TC60
Description 256mbit GDDR sdram 56Mbit GDDR sdram内存<br>CAbLE ASSEMbLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CAbLE 56Mbit GDDR sdram内存<br>
File Size 228.34K  /  18 Page

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    HYB25L256160AF HYB25L256160AF-75 HYE25L256160AF HYE25L256160AF-75

INFINEON[Infineon Technologies AG]<br>
Part No. HYb25L256160AF HYb25L256160AF-75 HYE25L256160AF HYE25L256160AF-75
Description 256mbit Mobile-RAM<br>
File Size 822.19K  /  56 Page

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    K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K

Samsung Electronic<br>SAMSUNG[Samsung semiconductor]<br>
Part No. K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
Description 64mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz<br>1M x 16bit x 4 banks Synchronous DRAM<br>64mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz<br>
File Size 1,152.92K  /  42 Page

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    K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238

SAMSUNG SEMICONDUCTOR CO. LTD.<br>Samsung Semiconductor Co., Ltd.<br>DiCon Fiberoptics, Inc.<br>SAMSUNG[Samsung semiconductor]<br>Samsung Electronic<br>
Part No. K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
Description 256mbit GDDR sdram 56Mbit GDDR sdram内存<br>; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR sdram内存<br>8M x 32 DDR DRAM, 0.6 ns, PbGA144 FbGA-144<br>8M x 32 DDR DRAM, 0.6 ns, PbGA144 LEAD FREE, FbGA-144<br>
File Size 295.12K  /  17 Page

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    EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 EM6A9320BI-35 EM6A9320BI-4 EM6A9320BI-5 EM6A9320BI-2.8 EM6A9320BI-3.0

ETRON[Etron Technology, Inc.]<br>Etron Technology Inc.<br>ETRON[Etron Technology Inc.]<br>
Part No. EM6A9320 EM6A9320bI-28 EM6A9320bI-30 EM6A9320bI-33 EM6A9320bI-35 EM6A9320bI-4 EM6A9320bI-5 EM6A9320bI-2.8 EM6A9320bI-3.0 EM6A9320bI-3.3 EM6A9320bI-3.5
Description 285MHz 2.8V 4m x 32 DDR sdram<br>300MHz 2.8V 4m x 32 DDR sdram<br>333MHz 2.8V 4m x 32 DDR sdram<br>350MHz 2.8V 4m x 32 DDR sdram<br>4m x 32 DDR sdram 4米32 DDR sdram内存<br>
File Size 606.65K  /  16 Page

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    HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V56820BL HY57V56820BLT-K HY57V56820BLT-P HY57V56820BT-8 HY57V56820BT-H H

Hynix Semiconductor<br>
Part No. HY57V56820bT HY57V56820bLT-S HY57V56820bT-S HY57V56820bL HY57V56820bLT-K HY57V56820bLT-P HY57V56820bT-8 HY57V56820bT-H HY57V56820bT-6 HY57V56820bT-K HY57V56820bT-P HY57V56820b HY57V56820bLT-6 HY57V56820bLT-8 HY57V56820bLT-H
Description 32Mx8|3.3V|8K|K|SDR sdram - 256M<br>sdram|4x8Mx8|CMOS|TSOP|54PIN|PLASTIC<br>4 banks x 8M x 8bit Synchronous DRAM<br>sdram - 256Mb<br>
File Size 140.23K  /  12 Page

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    K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K4M511633C-RF1L K4M511633C-RF75 K4M511633C-RG K4M511633C-RBF1L K4M51163

Samsung semiconductor<br>
Part No. K4m511633C-RbF1H K4m511633C-RbF75 K4m511633C-RbL K4m511633C-RF1L K4m511633C-RF75 K4m511633C-RG K4m511633C-RbF1L K4m511633C-RbG K4m511633C-RbN K4m511633C-RF1H K4m511633C-RL K4m511633C-RN K4m511633C-RL1H0 K4m511633C-RF1H0 K4m511633C-RN750
Description 32M x 16 SYNCHRONOUS DRAM, 5.4 ns, PbGA54<br>32M x 16 SYNCHRONOUS DRAM, 7 ns, PbGA54<br>8M x 16bit x 4 bANKS MObILE sdram IN 54FbGA<br>
File Size 110.66K  /  12 Page

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    Samsung Semiconductor Co., Ltd.<br>SAMSUNG SEMICONDUCTOR CO. LTD.<br>SAMSUNG[Samsung semiconductor]<br>Samsung Electronic<br>
Part No. K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153PF-YF1L K4S51153PF-YF75 K4S51153PF-YF90 K4S51153PF-YPF K4S51153PF-YF1L0 K4S51153PF-YF750 K4S51153PF-YF900
Description 32M x 16 SYNCHRONOUS DRAM, 6 ns, PbGA54 FbGA-54<br>8M x 16bit x 4 banks Mobile sdram in 54FbGA 8米16 × 4银行4FbGA移动sdram<br>32M x 16 SYNCHRONOUS DRAM, 7 ns, PbGA54 FbGA-54<br>From old datasheet system<br>
File Size 104.82K  /  12 Page

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For 256mbit sdram 4m x 16bit x 4 b Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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