| |
|
 |
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MF-2700FRB-M0XMA MF-2700FRB-M02MA MF-2700FRB-M03MA
|
| OCR Text |
...y affect module reliability. Tc=25deg.C. Parameters Supply voltage LPA, OIL output current DTV input voltage Storage temperature Operating case temperature Soldering Temperature Soldering Time Relative humidity(non condensation) Fiber bend ... |
| Description |
SONET / SDH RECEIVER MODULE
|
| File Size |
220.40K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF0909A_1 MGF0909A MGF0909A1
|
| OCR Text |
...75deg.C
TC=0deg TC=50deg 45 TC=25deg TC=75deg 90
40
80
35 Po Pout(dBm) 30
70
60
PAE 20 40
GLP(dB)
15 GP 10
30
20
5
10
0 0 10 20 Pin (dBm) 30 40
0
Mitsubishi Electric
PAE (%)
June/2004
25
... |
| Description |
L,S BAND POWER GaAs FET
|
| File Size |
34.07K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF0915A
|
| OCR Text |
...dBm) 30 25 20 15
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Po v.s. Pin
freq.=2.5GHz
13 12 11 10 9 8 7 6 5 4 3 5
Id(RF) v.s. Pin freq.=2.5GHz 1.2 1.0 Ig(RF)(mA) 0.8 0.6 0.4
Tc=80deg.C
Ig(RF) v.s. Pin freq.=2.5GHz 26 22 18 14 10 6 2 ... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
|
| File Size |
1,309.44K /
48 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF0921A
|
| OCR Text |
...(dBm) 27 25 23 21 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
-5 0 5 10 15 20 25
1 0 -1
16 15 14 13 12 Pin(dBm)
19 17 15 -5 0
Tc=80deg.C Tc=25deg.C Tc=-20deg.C 5 10 15 20 25 Pin(dBm)
0.1 0.0 -5 0
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
... |
| Description |
LnS Band GaAs FET
L & S BAND GaAs FET
|
| File Size |
427.43K /
24 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF1951A_1 MGF1951A MGF1951A1
|
| OCR Text |
...10 0 0.0 1.0 2.0 3.0 4.0 5.0 Ta=25deg.C VGS=-0.2V/STEP
ID vs. VGS
100 90 80
Ta=25deg.C VDS=3V
VGS=0V
DRAIN CURRENTID(mA)
DRAIN CURRENT ID(mA)
70 60 50 40 30 20 10 0 -3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
D... |
| Description |
Microwave Power MES FET
|
| File Size |
142.27K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF1954A
|
| OCR Text |
...
(Ta=25C)
ID vs. VDS
300 Ta=25deg.C VGS=-0.2V/STEP
ID vs. VGS
250
Ta=25deg.C VDS=6V
200
VGS=0V
DRAIN CURRENTID(mA)
8.0 9.0 10.0
DRAIN CURRENT ID(mA)
150
100
50
0 0.0 1.0 2.0 3.... |
| Description |
Microwave Power MES FET
|
| File Size |
157.33K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| Part No. |
MGFC36V3436 C363436
|
| OCR Text |
... ID IGR IGF PT Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1
(Ta=25deg.C) Rating... |
| Description |
From old datasheet system
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
| File Size |
130.71K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFC39V3436 C393436
|
| OCR Text |
... ID IGR IGF PT Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1
(Ta=25deg.C) Rating... |
| Description |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
| File Size |
132.12K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFC40V5258_04 MGFC40V5258 MGFC40V525804
|
| OCR Text |
...e Storage temperature *1
(Ta=25deg.C) Ratings -15 -15 7.5 -20 42 42.8 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making sem... |
| Description |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
| File Size |
205.03K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
