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Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
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| Part No. |
MAX9702EUI MAX9702BEUI MAX9702BETI MAX9702ETI MAX9702
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| OCR Text |
..................................+260ma continuous input current (all other pins) .........................?0ma duration of out_ short circuit to gnd or pv dd ......... continuous duration of short circuit between out__ ..................cont... |
| Description |
1.8W, Filterless, Stereo, Class D Audio Power Amplifier and DirectDrive Stereo Headphone Amplifier 1.8W的，滤波，立体声D类音频功率放大器和DirectDrive立体声耳机放大
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| File Size |
1,407.04K /
32 Page |
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Execlics
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| Part No. |
EFA072A
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| OCR Text |
... ids drain current idss 260ma igsf forward gate current 20ma 4ma pin input power 25dbm @ 3db compression tch channel temperature 175 o c 150 o c tstg storage temperature - 65/175 o c - 65/150 o c pt... |
| Description |
Low Distortion GaAs Power FET
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| File Size |
55.38K /
2 Page |
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it Online |
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Execelies
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| Part No. |
EFA080A
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| OCR Text |
... ids drain current idss 260ma igsf forward gate current 20ma 4ma pin input power 25dbm @ 3db compression tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt ... |
| Description |
Low Distortion GaAs Power FET
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| File Size |
149.59K /
2 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K7M801825M
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| OCR Text |
...ers icc ; from 240ma to 260ma at -10, i sb1 ; from 10ma to 30ma, i sb2 ; from 10ma to 30ma. 1. a dd 119bga(7x17 ball grid array package) . 2. a dd x32 organization a dd v ddq supply voltage( 2.5v ) changed v ol m... |
| Description |
256Kx36 & 512Kx18 Flow-Through NtRAMData Sheet
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| File Size |
383.53K /
17 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7M161825M K7M163625M
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| OCR Text |
...320ma at -8, from 260ma to 300ma at -9, from 240ma to 280ma at -10 3. change pin allocation at 119bga . - a4 ; from nc to a . - b2 ; from a to cs2 - b4 ; from cke to adv - b6 ; from a to c... |
| Description |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
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| File Size |
355.71K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM736V689A
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| OCR Text |
...characteristics. icc value from 260ma to 280ma at -72 i sb1 value from 10ma to 20ma i sb2 value from 10ma to 20ma draft date may. 19. 1998 july. 13. 1998 aug. 31. 1998 the attached data sheets are prepared and approv... |
| Description |
64Kx36-Bit Synchronous Pipelined Burst SRAM(64Kx36位同步流水线脉冲 静RAM)
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| File Size |
332.53K /
15 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM736V847
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| OCR Text |
...ers icc ; from 240ma to 260ma at -10, i sb1 ; from 10ma to 30ma, i sb2 ; from 10ma to 30ma. draft date april. 09. 1998 june. 02. 1998 sep. 09. 1998
preliminary km736v847 256... |
| Description |
256Kx36-Bit Flow Through No Turnaround SRAM(256Kx36位数据流无返回静RAM)
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| File Size |
282.63K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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