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  3 3v low power5kv esd-protecte Datasheet PDF File

For 3 3v low power5kv esd-protecte Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    DF3A6.2LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 138.76K  /  3 Page

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    DF3A8.2LFU07

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFU07
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 130.76K  /  3 Page

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    DF3A8.2FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 170.37K  /  3 Page

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    DF3A5.6LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 131.60K  /  3 Page

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    DF3A5.6FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 154.38K  /  3 Page

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    DF3A8.2LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 126.44K  /  3 Page

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    DF3A5.6FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.71K  /  3 Page

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    DF3A6.2FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 157.97K  /  3 Page

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    DF3A5.6LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 125.13K  /  3 Page

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    DF3A6.8LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.8LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 119.34K  /  3 Page

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