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  300-gd Datasheet PDF File

For 300-gd Found Datasheets File :: 13289    Search Time::1.406ms    
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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text ...F A I 800 15 60 30 40 295 2.36 300 15 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1210 STATIC...gd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capac...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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    APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL

ADPOW[Advanced Power Technology]
Part No. APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text ...F A I 800 15 60 30 40 295 2.36 300 15 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1210 STATIC...gd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacit...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.71K  /  2 Page

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    FQPF5N20L

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF5N20L
OCR Text ...3.5 3.2 5.5 32 0.26 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Res...
Description 200V LOGIC N-Channel MOSFET

File Size 553.47K  /  8 Page

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    IRF640A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF640A
OCR Text ... O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RJC R CS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambi...gd Coss= Cds+ C gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] VDS = 4 V 0 0 VDS = 1 0 V VDS...
Description Advanced Power MOSFET

File Size 259.33K  /  7 Page

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    IRF640FP IRF640

STMICROELECTRONICS[STMicroelectronics]
Part No. IRF640FP IRF640
OCR Text ...ting area ( 1) ISD 18A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized ...gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Con ...
Description N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

File Size 105.91K  /  9 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ...0 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C www.irf.com 1 10/09/00 ...gd Coss = Cds + Cgd 20 ID = 11A 16 V DS= 160V V DS= 100V V DS= 40V C, Capacitance(pF)...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    IRF640S 6774

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF640S 6774
OCR Text ... 150 150 ( 1) ISD 18A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX Un it V V V A A A W W /o C V/ns o o C C (*) Pulse width limited ...gd Parameter Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con...
Description N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAY TM MOSFET
From old datasheet system

File Size 83.08K  /  8 Page

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    IRFBA90N20 IRFBA90N20D

IRF[International Rectifier]
Part No. IRFBA90N20 IRFBA90N20D
OCR Text ...90 650 4.3 30 6.3 -55 to + 175 300 (1.6mm from case ) 20 Units A W W/C V V/ns C N Thermal Resistance Parameter RJC RCS RJA Junctio...gd Coss = C + Cgd ds VGS, Gate-to-Source Voltage (V) 12 ID = 59A 10 VDS = 160V VDS = 1...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??
Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?

File Size 97.19K  /  8 Page

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    IRFR15N20D IRFU15N20D

IRF[International Rectifier]
Part No. IRFR15N20D IRFU15N20D
OCR Text ...0 3.0 0.96 30 8.3 -55 to + 175 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Parameter RJC RJA RJA Junction-...gd Coss = C + C ds gd ID = 10A VDS = 160V VDS = 100V VDS = 40V VGS , Gate-to-Source Voltage (V...
Description SMPS MOSFET

File Size 180.49K  /  10 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ...0.6 20 60 13 7.5 4.4 -55 to 150 300 ( for 5s ) 1.0 ( Typical ) Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g www.irf...gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Tot...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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For 300-gd Found Datasheets File :: 13289    Search Time::1.406ms    
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