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  330v Datasheet PDF File

For 330v Found Datasheets File :: 32640    Search Time::4.75ms    
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    VN330SP VN330SP13TR VN330

STMICROELECTRONICS[STMicroelectronics]
Part No. VN330SP VN330SP13TR VN330
OCR Text ... o Parameter Value 45 -0.3 Internally Limited -6 10 10 2000 400 Internally Limited Internally Limited -55 to 150 Unit V V A A mA m...30V R LOAD < 10 m (see figure 2) V DIAG = 24 V V CC = 10 to 36V C C o (*) Status determinat...
Description QUAD HIGH SIDE SMART POWER SOLID STATE RELAY

File Size 68.64K  /  9 Page

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    2N7002-01

DIODES[Diodes Incorporated]
Diodes Inc.
Part No. 2N7002-01
OCR Text ...x 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * Case: SOT-23, Molded Plastic Terminals: Solderable p...30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS ...
Description    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 61.72K  /  3 Page

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    2N7002DW

DIODES[Diodes Incorporated]
Part No. 2N7002DW
OCR Text ... Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 KXX S2 G2 D1 BC 0.65 Nomina...30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS ...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 64.65K  /  3 Page

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    2N7002T

DIODES[Diodes Incorporated]
Part No. 2N7002T
OCR Text ... G H N M Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 T...30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    2N7002V 2N7002V-7 2N7002VA-7

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002V 2N7002V-7 2N7002VA-7
OCR Text ... By Design/RoHS Compliant (Note 3) D G BC A NEW PRODUCT SOT-563 Dim A B C D G H SEE NOTE 1 K M H Min 0.15 1.10 1.55 0.90 1.50 0.5...30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS ...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 67.17K  /  3 Page

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    2N7002W

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002W
OCR Text ...%. DS30099 Rev. 4P-1 1 of 3 2N7002W NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain...30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    2N7002

PANJIT[Pan Jit International Inc.]
Part No. 2N7002
OCR Text ... 1.2 0.60 0.09 2700 320 2.5 7.5 3.75 1.50 V V mA mS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capac...30V, RL=150, ID=200 mA VGS=10V, RGEN=25 VDD=30V, RL=150, ID=200 mA VGS=10V, RGEN=25 20 11 4 50 25 5 ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    2SA1601

Shindengen Electric Mfg.Co....
Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Manufacturing Company, Ltd.
Part No. 2SA1601
OCR Text ...C I -2 A B Base Current Peak I -3 A BP Total Transistor Dissipation = 25*Z P 45 W T Tc Dielectric Strength Vdis Terminal to case, AC 12minut...30V Tc = 25C 0.01 0 -5 -10 -15 Collector Current IC [A] 2SA1601 1 Switching Time - Tc t...
Description Switching Power Transistor(-15A PNP)

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    2SC3187

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3187
OCR Text ...540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector to base voltage Collecto...30V, IE = -20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 70 140 1.9 min 300 300 7 50 250 1.2 1.5 V V ...
Description - ContinuousShort Circuit Protection ( /P-Suffix)
Silicon NPN triple diffusion planer type(For small TV video output)

File Size 35.33K  /  2 Page

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ... Ratings -60 -80 -60 -80 -6 -5 -3 15 2.0 150 -55 to +150 Unit V 2.50.2 s Absolute Maximum Ratings 13.00.2 4.20.2 High forward...30V, IB = 0 VCE = -60V, IB = 0 VEB = -6V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, I...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

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