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MAX5496 0M000 CONDUCTO 68100 SF800U33 ACS108 HD74H 68HC9
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  36m a Datasheet PDF File

For 36m a Found Datasheets File :: 610    Search Time::2.015ms    
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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPN4426S8TG SPN4426 SPN4426S8RG
OCR Text ...28m@VGS= 4.5V 20V/7.0a,RDS(ON)= 36m@VGS= 2.5V 20V/3.0a,RDS(ON)= 42m@VGS= 1.8V Super high density cell design for extremely low RDS (ON) Exce...a a a W /W 7.4 6.0 35 2.3 2.5 1.6 -55/150 -55/150 80 2006/10/30 Ver.1 Page 2 SPN4426 ...
Description N-Channel Enhancement Mode MOSFET

File Size 228.28K  /  8 Page

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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPN4920S8TG SPN4920 SPN4920S8RG
OCR Text ... 28m@VGS= 10V 30V/6.0a,RDS(ON)= 36m@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximu...a a a W /W 7.2 6.0 35 1.7 2.8 1.8 -55/150 -55/150 65 2007/ 07/ 17 Ver.2 Page 2 SPN4920...
Description N-Channel Enhancement Mode MOSFET

File Size 205.72K  /  8 Page

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    NEC[NEC]
Part No. UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E33-EQ2 UPD44324084F5-E40-EQ2 UPD44324084F5-E50-EQ2 UPD44324094F5-E33-EQ2 UPD44324094F5-E40-EQ2 UPD44324094F5-E50-EQ2 UPD44324184F5-E33-EQ2 UPD44324184F5-E40-EQ2 UPD44324184F5-E50-EQ2 UPD44324364F5-E33-EQ2 UPD44324364F5-E40-EQ2
OCR Text 36m-BIT DDRII SRaM 4-WORD BURST OPERaTION Description The PD44324084 is a 4,194,304-word by 8-bit, the PD44324094 is a 4,194,304-word by 9-bit, the PD44324184 is a 2,097,152-word by 18-bit and the PD44324364 is a 1,048,576-word by 36-bi...
Description 36m-BIT DDRII SRaM 4-WORD BURST OPERaT

File Size 343.03K  /  32 Page

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    NEC[NEC]
Part No. UPD44325362F5-E50-EQ2 UPD44325082 UPD44325082F5-E40-EQ2 UPD44325082F5-E50-EQ2 UPD44325092F5-E40-EQ2 UPD44325092F5-E50-EQ2 UPD44325182F5-E40-EQ2 UPD44325182F5-E50-EQ2 UPD44325362F5-E40-EQ2
OCR Text 36m-BIT QDRTMII SRaM 2-WORD BURST OPERaTION Description The PD44325082 is a 4,194,304-word by 8-bit, the PD44325092 is a 4,194,304-word by 9-bit, the PD44325182 is a 2,097,152-word by 18-bit and the PD44325362 is a 1,048,576-word by 36-...
Description 36m-BIT QDRII SRaM 2-WORD BURST OPERaTION

File Size 347.55K  /  32 Page

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    NEC[NEC]
Part No. UPD44325364F5-E50-EQ2 UPD44325084 UPD44325084F5-E33-EQ2 UPD44325084F5-E40-EQ2 UPD44325084F5-E50-EQ2 UPD44325094F5-E33-EQ2 UPD44325094F5-E40-EQ2 UPD44325094F5-E50-EQ2 UPD44325184F5-E33-EQ2 UPD44325184F5-E40-EQ2 UPD44325184F5-E50-EQ2 UPD44325364F5-E33-EQ2 UPD44325364F5-E40-EQ2
OCR Text 36m-BIT QDRTMII SRaM 4-WORD BURST OPERaTION Description The PD44325084 is a 4,194,304-word by 8-bit, the PD44325094 is a 4,194,304-word by 9-bit, the PD44325184 is a 2,097,152-word by 18-bit and the PD44325364 is a 1,048,576-word by 36-...
Description 36m-BIT QDRII SRaM 4-WORD BURST OPERaTION

File Size 367.18K  /  36 Page

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    AO4435

Alpha & Omega Semiconductors
Part No. aO4435
OCR Text ...N) < 18m (VGS = -10V) RDS(ON) < 36m (VGS = -5V) SOIC-8 Top View S S S G D D D D G D S absolute Maximum Ratings Ta=25C unless oth...a Pulsed Drain Current Power Dissipation a B Units V V a Ta=25C Ta=70C Ta=25C Ta=70C ID IDM P...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 164.95K  /  4 Page

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    GTM[GTM CORPORATION]
Part No. GU9971
OCR Text ...SFET BVDSS RDS(ON) ID 60V 36m 25a The GU9971 provide the designer with the best combination of fast switching, ruggedized device de...a b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.5...
Description N-CHaNNEL ENHaNCEMENT MODE POWER MOSFET

File Size 264.82K  /  4 Page

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    ZX5T853GTC ZX5T853G ZX5T853GTA

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZX5T853GTC ZX5T853G ZX5T853GTa
OCR Text 36m ; IC = 6a DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on...a) Peak pulse current Power dissipation at T a =25C (a) Linear derating factor Power dissipation at ...
Description NPN Generation 5 Transistors in SOT223
Circular Connector; No. of Contacts:39; Series:; Body Material:aluminum; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert arrangement:20-39; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
100V NPN LOW SaT MEDIUM POWER LOW SaTURaTION TRaNSISTOR IN SOT223

File Size 123.31K  /  6 Page

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    ZXTN2011G_06 ZXTN2011G ZXTN2011GTA ZXTN2011GTC ZXTN2011G06

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZXTN2011G_06 ZXTN2011G ZXTN2011GTa ZXTN2011GTC ZXTN2011G06
OCR Text 36m ; IC = 6a DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses m...a) Peak pulse current Power dissipation at T a =25C (a) Linear derating factor Power dissipation at ...
Description 100V NPN LOW SaTURaTION MEDIUM POWER LOW SaTURaTION TRaNSISTOR IN SOT223

File Size 129.69K  /  6 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXTN2011GTC ZXTN2011G ZXTN2011GTa
OCR Text 36m ; IC = 6a DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses m...a) Peak pulse current Power dissipation at T a =25C (a) Linear derating factor Power dissipation at ...
Description 100V NPN LOW SaTURaTION MEDIUM POWER LOW SaTURaTION TRaNSISTOR IN SOT223

File Size 119.39K  /  6 Page

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