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				OKI electronic components OKI electronic componets
Part No.	MSM5116400D MSM5116400D-50 MSM5116400D-50SJ MSM5116400D-60 MSM5116400D-60SJ MSM5116400D-70 MSM5116400D-70SJ MSM5116400D-70TS-K MSM5116400D-50TS-K MSM5116400D-60TS-K
OCR Text	4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE This version:Apr.1999 DESCRIPTION The MSM5116400D is a 4,194,304-word 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400D achieves high integrat...
Description	4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
File Size	158.77K / 14 Page	View it Online	Download Datasheet

				OKI electronic components OKI[OKI electronic componets]
Part No.	MSM5116405C
OCR Text	4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405C is a 4,194,304-word 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405C achieves high integration, high-speed ...
Description	4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
File Size	674.83K / 18 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	PA28F400BL-B150 PA28F400BL-T150 28F400BL-TB E28F004BL-B150 E28F004BL-T150 E28F400BL-B150 E28F400BL-T150
OCR Text	4-MBlT (256K x 16 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F400BL-T B 28F004BL-T B Y Low Voltage Operation for Very Low-Pow...194 304-bit non-volatile memories organized as either 524 288 bytes or 262 144 words of information ...
Description	4-MBlT (256K x 16 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
File Size	486.33K / 44 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	PA28F400BX-B120 PA28F400BX-B60 PA28F400BX-B80 PA28F400BX-T120 PA28F400BX-T60 PA28F400BX-T80 TE28F004BX-B80 TE28F004BX-T80 TE28F400BX-B80 TE28F400BX-T80 TB28F400BX-B80 TB28F400BX-T80 28F400BX-TB E28F004BX-B120 E28F004BX-B60 E28F004BX-B80 E28F004BX-T120 E28F004BX-T60 E28F004BX-T80 E28F400BX-B120 E28F400BX-B60 E28F400BX-B80 E28F400BX-T120 E28F400BX-T60 E28F400BX-T80
OCR Text	4-MBIT (256K X 16 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 28F400BX-T B 28F004BX-T B Y x8 x16 Input Output Architecture 28F400BX-T 28F4...194 304-bit non-volatile memories organized as either 524 288 bytes or 262 144 words of information ...
Description	4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
File Size	549.26K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC55V16256JI TC55V16256JI-12 TC55V16256JI-15
OCR Text	...TION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a si...
Description	262, 144-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	180.58K / 11 Page	View it Online	Download Datasheet

				PanJit International, Inc. Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics] http://
Part No.	3.0SMCJ5.0 3.0SMCJ5.0A 3.0SMCJ5.0C 3.0SMCJ5.0CA 3.0SMCJ15 3.0SMCJ150 3.0SMCJ150A 3.0SMCJ150C 3.0SMCJ150CA 3.0SMCJ15A 3.0SMCJ15C 3.0SMCJ15CA 3.0SMCJ60 3.0SMCJ60A 3.0SMCJ60C 3.0SMCJ60CA 3.0SMCJ33 3.0SMCJ33A 3.0SMCJ33C 3.0SMCJ33CA 3.0SMCJ30 3.0SMCJ30A 3.0SMCJ30C 3.0SMCJ30CA 3.0SMCJ78 3.0SMCJ78A 3.0SMCJ78C 3.0SMCJ78CA 3.0SMCJ85 3.0SMCJ85A 3.0SMCJ85C 3.0SMCJ85CA 3.0SMCJ28 3.0SMCJ28A 3.0SMCJ28C 3.0SMCJ28CA 3.0SMCJ16 3.0SMCJ160 3.0SMCJ160A 3.0SMCJ160C 3.0SMCJ160CA 3.0SMCJ16A 3.0SMCJ16C 3.0SMCJ16CA 3.0SMCJ13 3.0SMCJ130 3.0SMCJ130A 3.0SMCJ130C 3.0SMCJ130CA 3.0SMCJ13A 3.0SMCJ13C 3.0SMCJ13CA 3.0SMCJ36A 3.0SMCJ40 3.0SMCJ36 3.0SMCJ36CA 3.0SMCJ36C 3.0SMCJ70 3.0SMCJ90A 3.0SMCJ9.0 3.0SMCJ24 3.0SMCJ26CA 3.0SMCJ100CA 3.0SMCJ100C 3.0SMCJ12CA 3.0SMCJ12C 3.0SMCJ10CA 3.0SMCJ10C 3.0SMCJ18 3.0SMCJ10 3.0SMCJ12 3.0SMCJ14 3.0SMCJ10A 3.0SMCJ58CA 3.0SMCJ58C 3.0SMCJ51 3.0SMCJ54 3.0SMCJ8.5CA 3.0SMCJ6.5A 3.0SMCJ6.0A 30SMCJ 3.0SMCJ90CA 3.0SMCJ100 3.0SMCJ100A 3.0SMCJ11 3.0SMCJ110 3.0SMCJ110A 3.0SMCJ110C 3.0SMCJ110CA 3.0SMCJ11A 3.0SMCJ11C 3.0SMCJ11CA 3.0SMCJ120 3.0SMCJ120A 3.0SMCJ120C 3.0SMCJ120CA 3.0SMCJ12A 3.0SMCJ14A 3.0SMCJ14C 3.0SMCJ14CA 3.0SMCJ17 3.0SMCJ170 3.0SMCJ170A 3.0SMCJ170C 3.0SMCJ170CA 3.0SMCJ17A 3.0SMC
OCR Text	.../1000S Waveform (Note 1) Figure 4 Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) (Note 2, ...194.8 159.6 176.4 149.2 184.8 136.4 150.6 126.0 139.4 116.2 129.4 111.6 123.0 104.2 115.4 98.4 106.6...
Description	3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS 使用3000W表面贴装瞬态电压抑制器 IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,200.0 V; IC(max) @ 25°: 30.0 A; IC(max) @ 100°: 15.0 A IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; V_CE (max): 1,200.0 V; I_C(max)@ 25°: 30.0 A; I_C(max) @ 100°: 15.0 A
File Size	62.80K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27C040N150 NM27C040QE150
OCR Text	4,194,304-Bit (512K x 8) High Performance CMOS EPROM February 1999 NM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Eras...
Description	4,194,304 Bit (512K x 8) High Performance CMOS EPROM 4194304-Bit (512K x 8) High Performance CMOS EPROM 4,194,304-Bit (512K x 8) High Performance CMOS EPROM 4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM IC-4MB CMOS OTP PROM
File Size	111.00K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NM27C210 NM27C210QE150 NM27C210QE120
OCR Text	...Decoder A0 - A15 Address Inputs 4,194,304-Bit Cell Matrix X Decoder Output Enable Chip Enable, and Program Logic Data Outputs O0 - O15 Output Buffers DS011093-1 AMGTM is a trademark of WSI, Inc. (c) 1998 Fairchild Semiconductor ...
Description	1,048,576-Bit (64K x 16) High Performance CMOS EPROM [Life-time buy] 1 /048 /576-Bit (64K x 16) High Performance CMOS EPROM
File Size	101.68K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NM27C240 NM27C240QE120
OCR Text	4,194,304-Bit (256k x 16) High Performance CMOS EPROM July 1998 NM27C240 4,194,304-Bit (256k x 16) High Performance CMOS EPROM General Description The NM27C240 is a high performance Electrically Programmable UV erasable ROM (EPROM)....
Description	4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位（256k × 16）高性能的CMOS存储
File Size	96.59K / 10 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55V4000ST-70 TC55V4000ST-85
OCR Text	...SCRIPTION The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power su...
Description	524,288-WORD BY 8-BIT FULL CMOS STATIC RAM 524,288-WORD BY 8-BIT STATIC RAM
File Size	157.46K / 10 Page	View it Online	Download Datasheet

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