4.900v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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4.900v Datasheet PDF File

For 4.900v Found Datasheets File :: 1765 Search Time::1.156ms
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				Microsemi
Part No.	APT27GA90BD15 APT27GA90SD15
OCR Text	...age v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i ges gate-emitter leakage current v gs = 30v 100 na t o - 2 47 g c e d 3 pa k g c e...
Description	IGBT w/ anti-parallel diode
File Size	226.56K / 9 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2769-01MR
OCR Text	...Tch=25C Min. 900 3,5 Typ. 4,0 10 0,2 10 4 2 450 75 40 20 40 50 25 1 500 3 Max. 4,5 500 1,0 100 5,5 3,5 Unit V V A mA nA S pF...900V 5,5 2SK2769-01MR FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(T...
Description	N-channel MOS-FET
File Size	279.53K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN
OCR Text	...01R1AN SML1001R3AN / SML901R3AN 4 1.1 1.3 Min. 1000 900 250 1000 100 Typ. Max. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gat...900V 1000V 900V 9.5A 9.5A 8.5A 8.5A W 1.10W W 1.10W W 1.30W W 1.30W Test Conditions. VGS = 0V...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
File Size	60.52K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4631LS
OCR Text	...mm 2079D [2SC4631LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=5.0pF). Full-isolation package. High reliability(Adoption of HVP process). 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 123 ...
Description	NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications 900V/300mA High-Voltage Amplifier,High-Voltage Switching Applications
File Size	28.26K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PF50W
OCR Text	...C/W g (oz) www.irf.com 1 4/15/98 IRG4PF50W Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)EC...900V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5.0 mA VGE = 0V, VCE = 900V, TJ = 150C 100 nA VGE = 20V ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	125.36K / 8 Page	View it Online	Download Datasheet

				Eupec
Part No.	BSM200GB170DLC
OCR Text	...50 Hz, t = 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Satti...900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Anstiegszeit (induktive Last) ...
Description	IC,BUFFER/DRIVER,DUAL,4-BIT,HC-CMOS,SOP,20PIN,PLASTIC
File Size	140.19K / 8 Page	View it Online	Download Datasheet

For 4.900v Found Datasheets File :: 1765 Search Time::1.156ms
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