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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD16HHF1 RD16HHF1-15
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| OCR Text |
... f (MHz) 30 Zin (ohm) 20.02-j89.42 Zout (ohm) 2.99-j3.66 Conditions Po=20W, Vdd=12.5V,Pin=0.4W
RD16HHF1
MITSUBISHI ELECTRIC
6/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIO... |
| Description |
Silicon MOSFET Power Transistor 30MHz,16W
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| File Size |
272.16K /
8 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD2922
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| OCR Text |
...
GC81900
100
GC83360
0. 42
50 30
0. 4 Rth(j-c) (C/W)
Ids, DRAIN CURRENT (A)
20
(1)
0. 38
10
5 3 2
0. 36
...2K Ohm Resistor 3.3K Ohm / 5 W Resistor 6.8 V Zener Diode 20 nH Inductor 70 nH Inductor 30 nH Induct... |
| Description |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
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| File Size |
206.96K /
13 Page |
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it Online |
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AUK[AUK corp]
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| Part No. |
SL5019P SL5019 SL50191
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| OCR Text |
...URE 60 54 -30dBm 48 Vcc =4.0Vdc 42 fo = 10.7 MHz 36 -70dBm 30 24 18 12 -110dBm 6 0 -55 -35 -15 5 25 45 65 85 105 125 oC TA A M B I E N T T E M P E R A T U R E )(
MIXER OUTPUT vs. RF Input 0 -10 MIXER OUTPUT (dBm) -20 -30 -40 -50 -60 -70 ... |
| Description |
SL5018
LOW POWER NARROW BAND FM IF
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| File Size |
79.67K /
6 Page |
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it Online |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
STQ-1016Z STQ-1016
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| OCR Text |
... 275 to 500 MHz +3 +6 -38 34 58 42 62 -154 -2 -0.2 +4.75 0.5 0.05 +5 80 25 *Guaranteed by design -150* +2 +0.2 +5.25 86 -30 Typ. Max. 1000 -...2K
AD 8138 VC C 1K + VOC M 50 50 600m V p-p differential D C levels for BBIN , BBIP, BBQN , BBQP ... |
| Description |
250 - 1000 MHz Direct Quadrature Modulator
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| File Size |
95.99K /
6 Page |
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it Online |
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TMT[Taiwan Memory Technology]
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| Part No. |
T431616B-20S T431616B T431616B-10C T431616B-10S T431616B-20C
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| OCR Text |
... View)
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 Vss DQ15 DQ14 V SSQ DQ13 DQ12 V DDQ DQ11 DQ10 V SSQ DQ9 D...2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if ... |
| Description |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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| File Size |
564.16K /
31 Page |
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it Online |
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TMT[Taiwan Memory Technology]
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| Part No. |
T431616C-7SG T431616C T431616C-6S T431616C-6SG T431616C-7S
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| OCR Text |
...T C H ) 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 V ss D Q 15 D Q 14 V SSQ D Q 13 D Q 12 VDDQ D Q 11 D Q 10...2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if ... |
| Description |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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| File Size |
714.58K /
30 Page |
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it Online |
Download Datasheet |
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TM Technology, Inc.
TMT[Taiwan Memory Technology]
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| Part No. |
T62M99A-K T62M99A T62M99A-D
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| OCR Text |
...16M 44.1ms 0.15%
1.28K 16.6M 42.9ms 0.15%
1.08K 17.4M 40.6ms 0.14%
894 18.1M 38.7ms 0.14%
57.7ms 53.6ms
THD+N% 0.18%
Radj Fck TD
723 18.8M
519 19.9M 0.13%
37.2ms 34.9ms
THD+N% 0.14%
Note :This Table is for S... |
| Description |
Digital Sound Processor Embedded 48K Bits SRAM 数字声音处理器嵌入式48,000位的SRAM
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| File Size |
49.70K /
7 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
VNW35NV04 VNB35NV04 VNP35NV04 VNV35NV04 VNB35NV0413TR
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| OCR Text |
...j=-40C
48
50 45
Vds=13V
42 36 30
Tj=25C Tj=150C
Vds=13.5V
40 35 30
Tj=-40C
Tj=150C
25 20
24 18 15 12 6 0 0 4 8 12 16 20 24 28 32
Tj=25C
10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Id (A)
Vin (V)
Output C... |
| Description |
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET
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| File Size |
301.10K /
19 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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