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  5.5ns Datasheet PDF File

For 5.5ns Found Datasheets File :: 1485    Search Time::3.765ms    
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    M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M5408BTP M5M5408BKV-10H M5M5408BKV-10HI M5M5408BKV-10HW M5M5408BKV-10L M5M

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M5408BTP M5M5408BKV-10H M5M5408BKV-10HI M5M5408BKV-10HW M5M5408BKV-10L M5M5408BKV-10LI M5M5408BKV-10LW M5M5408BKR-55LW M5M5408BKV-55LW
OCR Text ... 25C --70C 50A 85C --- max. 55ns 70ns 100ns 55ns Active current Icc1 (5.0V, typ.) Standard 0 ~ +70C M5M5408B## -10L M5M5408B## -55H M5M5408B## -70H M5M5408B## -10H M5M5408B## -55LW M5M5408B## -70LW 5.0V 5.0V 70ns 100ns 55ns ...
Description 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

File Size 73.84K  /  9 Page

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    BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 B

Electronic Theatre Controls, Inc.
ETC
BSI
Brilliance Semiconductor
Brilliance Semiconducto...
Part No. BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 BD616LV4017AI-70 BD616LV4017AIG55 BD616LV4017AIG70 BD616LV4017AIP55 BD616LV4017AIP70 BD616LV4017DC-55 BD616LV4017DC-70 BD616LV4017DCG55 BD616LV4017DCG70 BD616LV4017DCP55 BD616LV4017DCP70 BD616LV4017DI-55 BD616LV4017DI-70 BD616LV4017DIG55 BD616LV4017DIG70 BD616LV4017DIP55 BD616LV4017DIP70 BD616LV4017EC-55 BD616LV4017EC-70 BD616LV4017ECG55 BD616LV4017ECG70 BD616LV4017ECP55 BD616LV4017ECP70 BD616LV4017EI-55 BD616LV4017EI-70 BD616LV4017EIG55 BD616LV4017EIG70 BD616LV4017EIP55 BD616LV4017EIP70 BS616LV4017 BS616LV4017AC BS616LV4017AI BS616LV4017DC BS616LV4017DI BS616LV4017EC BS616LV4017EI
OCR Text ...on : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21mA (@70ns) operating current I-grade: 22mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63mA (@55...
Description    Very Low Power/Voltage CMOS SRAM 256K X 16 bit
D-Subminiature Connector; Gender:Male; No. of Contacts:15; Contact Termination:IDC; D Sub Shell Size:DB15; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 非常低功电压CMOS SRAM56 × 16
CONNECTOR ELECTRICAL 非常低功电压CMOS SRAM56 × 16
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
D-Subminiature Connector; Gender:Male; No. of Contacts:25; Contact Termination:IDC; D Sub Shell Size:DB25; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
D-Subminiature Connector; Gender:Male; No. of Contacts:9; Contact Termination:IDC; D Sub Shell Size:DB9; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes
Asynchronous 4M(256Kx16) bits Static RAM

File Size 263.06K  /  10 Page

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    BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI

BSI[Brilliance Semiconductor]
Part No. BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV2025DC BS616LV2025DI
OCR Text ...0 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation * Data retention supply voltage as low as 1.5V * Easy expansion with ...
Description Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

File Size 250.57K  /  11 Page

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    R1WV6416RSD-5SI R1WV6416RSD-5SR R1WV6416RSD-7SI R1WV6416RSD-7SR R1WV6416RSA-5SI R1WV6416RSA-5SR R1WV6416RSA-7SI R1WV6416

http://
Renesas Electronics Corporation
Part No. R1WV6416RSD-5SI R1WV6416RSD-5SR R1WV6416RSD-7SI R1WV6416RSD-7SR R1WV6416RSA-5SI R1WV6416RSA-5SR R1WV6416RSA-7SI R1WV6416RSA-7SR R1WV6416RBG-5SI R1WV6416RBG-5SR R1WV6416RBG-7SI R1WV6416RBG-7SR
OCR Text ... 0.75mm pitch 48-ball Note1. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer's system. Please contact our sales office in your region, in case of the inquiry for 55ns parts. % - Temp...
Description 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)

File Size 193.41K  /  18 Page

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    DSK6F4016U6G K6F4016U6G K6F4016U6G-F DS_K6F4016U6G

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. DSK6F4016U6G K6F4016U6G K6F4016U6G-F DS_K6F4016U6G
OCR Text ...eliminary CMOS SRAM 48-TBGA, 55ns, 3.0V 48-TBGA, 70ns, 3.0V FUNCTIONAL DESCRIPTION CS1 H X1) X1) L L L L L L L L CS2 X1) L X1) H H H H H H H H OE X1) X1) X1) H H L L L X 1) WE X1) X1) X1) H H H H H L L L LB X1) X1) H L X 1) ...
Description    256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 178.87K  /  9 Page

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    HY62KF16403E

Hynix Semiconductor
Part No. HY62KF16403E
OCR Text ... 3ma - icc1 changed 25ma at 55ns -> 20ma at 55ns - icc1 changed 20ma at 70ns -> 15ma at 70ns - icc1 changed 3ma at 1us -> 2ma at 1us ac test conditions - output load changed 5pf -> 30pf data retention electric characteristic...
Description Super Low Power Slow SRAM - 4Mb

File Size 124.79K  /  13 Page

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