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  5.9a Datasheet PDF File

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    SEMIWELL[SemiWell Semiconductor]
Part No. SFP630
OCR Text ...ring purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 9 5.7 36 Units V A A A V mJ m...9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C ...
Description N-Channel MOSFET

File Size 799.90K  /  7 Page

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    SAMHOP[SamHop Microelectronics Corp.]
Part No. SDM4952
OCR Text ... AT UR E S ( m W ) MAX ID -5.3A R DS (ON) S uper high dense cell design for low R DS (ON). 50 @ V G S = -4.5V 75 @ V G S = -2....9A VGS =-2.7V, ID = -1.5A VDS = -5V, VGS = -4.5V VDS = -15V, ID = - 4.9A Min Typ C Max Unit -20 ...
Description Dual P -Channel E nhancement Mode F ield E ffect Transistor

File Size 290.39K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. KI7540DP
OCR Text ...= 150 )* t a =25 11.8 7.6 -8.9 -5.7 a t a =70 9.5 6.1 -7.1 -4.6 a pulsed drain current i dm a continuous source current (diode conduction)* ...9a p-ch 0.026 0.032 v gs =2.5v,i d = 9.8a n-ch 0.020 0.025 v gs =-2.5v,i d = -6.9a p-ch 0.043 0.053 ...
Description TrenchFET Power MOSFET PWM Optimized for High Efficiency

File Size 326.25K  /  2 Page

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    IRF7413QPBF

International Rectifier
Part No. IRF7413QPBF
OCR Text ...VDSS = 30V RDS(on) = 0.011 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFE...9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Tes...
Description HEXFET Power MOSFET

File Size 255.65K  /  9 Page

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    IRF7416QPBF

International Rectifier
Part No. IRF7416QPBF
OCR Text ...VDSS = -30V RDS(on) = 0.02 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFE...9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Tes...
Description HEXFET Power MOSFET

File Size 267.74K  /  9 Page

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    AP02N90P-HF

Advanced Power Electronics Corp.
Part No. AP02N90P-HF
OCR Text ...mperature range -55 to 150 6 62.5 linear derating factor 0.5 + 30 1.2 parameter rating 900 ap02n90p-hf 18 -55 to 150 parameter 1.9 1.9 a dva...9a - 2 - s i dss drain-source leakage current v ds =900v, v gs =0v - - 10 ua drain-source leakage cu...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 57.77K  /  4 Page

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    SDM8401

SamHop Microelectronics Corp.
ETC
Part No. SDM8401
OCR Text ... R DS (ON) ( m W ) TYP 18.5 @ V G S = 10V 25 @ V G S = 4.5V D1 8 38.5 @ V G S = -10V 57.5 @ V G S = -4.5V D1 7 D2 6 D2 ...9A VGS =4.5V, ID= 7A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ C Max Unit 30 1 V uA 100 n...
Description Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

File Size 1,028.05K  /  9 Page

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    IRF7478QPBF

International Rectifier
Part No. IRF7478QPBF
OCR Text ... available in Tape & Reel. 6 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C V...9A 3.4A 4.2A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform...
Description SMPS MOSFET

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    SPDPXXD270

Sensitron
Part No. SPDPXXD270
OCR Text ...teristics (at 25 oC and Vbias = 5.0V DC unless otherwise specified) Control & Status (TTL/CMOS Compatible) BIAS (Vcc) BIAS (Vcc) Current S1...9A 0.10W typ @ 0.6A 25OC 0.19W max @ 0.9A 25OC 0.25W max @ 0.9A 125OC 44mV typ @ 0.6A 25OC 77mV max ...
Description DC Solid State Power Controller Module

File Size 1,071.68K  /  11 Page

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