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  50.01 Datasheet PDF File

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    2SK3363-01

FUJI ELECTRIC CO LTD
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK3363-01
OCR Text ...GS EAV *1 PD Tch Tstg Rating 30 50 200 16 1735 80 +150 Unit V A A V mJ W C C -55 to +150 *1 L=0.925mH, Vcc=12V Equivalent circuit schemat...01 Characteristics Power Dissipation PD=f(Tc) 100 10 3 FUJI POWER MOSFET Safe operating area...
Description N-CHANNEL SILICON POWER MOS-FET

File Size 118.64K  /  4 Page

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    2SK3364-01

FUJI[Fuji Electric]
Part No. 2SK3364-01
OCR Text ...S EAV *1 PD Tch Tstg Rating 60 50 200 30 867 80 +150 -55 to +150 *1 L=0.463mH, Unit V A A V mJ W C C Vcc=24V Equivalent circuit schemati...01 Characteristics Power Dissipation PD=f(Tc) 100 FUJI POWER MOSFET Safe operating area ID=f(...
Description N-CHANNEL SILICON POWER MOS-FET

File Size 116.78K  /  4 Page

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    2SK3692-01

Fuji Electric
Part No. 2SK3692-01
OCR Text ...9.5 14 27 40 27 40 48 72 711 33 50 13.5 13 10.5 16 17 1.20 1.80 0.57 6.5 -55 to +150 outline drawings [mm] equivalent circuit schematic sup...01 fuji power mosfet 0 255075100125150 0 50 100 150 200 250 300 allowable power dissipation pd=f(tc)...
Description N-CHANNEL SILICON POWER MOSFET

File Size 103.94K  /  4 Page

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    2SK2871-01

FUJI[Fuji Electric]
Part No. 2SK2871-01
OCR Text ... stg Rating 450 8 32 35 8 215.9 50 150 -55 ~ +150 L=6.19mH,Vcc=45V > Equivalent Circuit Unit V A A V A mJ W C C - Electrical Charact...01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=4A; VGS=10V 8A...
Description N-channel MOS-FET

File Size 237.36K  /  3 Page

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    2SK2875-01

Fuji Electric
Part No. 2SK2875-01
OCR Text ... stg Rating 500 6 24 35 6 259.1 50 150 -55 ~ +150 L=13.2mH,Vcc=50V > Equivalent Circuit Unit V A A V A mJ W C C - Electrical Charact...01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=3A; VGS=10V 6A...
Description N-channel MOS-FET

File Size 237.27K  /  3 Page

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    2SK2890-01

FUJI[Fuji Electric]
Part No. 2SK2890-01
OCR Text ...GS E AV PD T ch T stg Rating 30 50 200 16 1441.5 50 150 -55 ~ +150 L=0.769mH,Vcc=12V Unit V A A V mJ* W C C - Electrical Characterist...01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=50A; VGS=10V ...
Description N-channel MOS-FET

File Size 218.40K  /  3 Page

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    2SK2893-01

FUJI[Fuji Electric]
Part No. 2SK2893-01
OCR Text ...(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is...
Description N-channel MOS-FET

File Size 253.36K  /  3 Page

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    2SK2897-01

FUJI[Fuji Electric]
Part No. 2SK2897-01
OCR Text ...55 0,10 12 4350 1400 390 30 50 290 140 1,43 45 Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics I...01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=22,5A; VGS=10V ...
Description N-channel MOS-FET

File Size 238.06K  /  3 Page

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    B60C-1060-01

Bookham, Inc.
Part No. B60C-1060-01
OCR Text 50% fill factor laser diode bar has been designed to provide the increased brightness and reliability required for direct diode applications...01 [1] Symbol Pop c1060 dc/dTop // - Ith D = Pop/(Iop-Ith) H = Pop/(VopxIop) Rs Iop Vop Top Qw...
Description 60W 10xxnm High Power Bare Laser Diode Bar

File Size 757.32K  /  4 Page

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