500-2800 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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500-2800 Datasheet PDF File

For 500-2800 Found Datasheets File :: 3672 Search Time::1.453ms
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				International Rectifier, Corp. Power MOSFET IRF[International Rectifier]
Part No.	IRFP044N
OCR Text	...VDS D.U.T. RG + V - DD 10 V 500 TO P 400 BO TTOM ID 1 1A 20A 28 A IAS tp 0.01 300 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 200 100 0 V D D = 2 5V 25 50 75 100 125 150 A 175 S...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.020ohm，身份证\u003d 53A条） 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
File Size	101.37K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
OCR Text	...MPERATURE (C) 125 150 0 100 300 500 600 200 400 700 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 800 Figure 5. On-Resistance Variation with Tempe...2800 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 400 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Coss Crss C...
Description	TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
File Size	156.99K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E_D ON2428 ON2426 MTB4N80E
OCR Text	...MPERATURE (C) 125 150 0 100 300 500 600 200 400 700 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 800 Figure 5. On-Resistance Variation with Tempe...2800 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 400 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Coss Crss C...
Description	TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
File Size	191.71K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
Part No.	MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
OCR Text	...MPERATURE (C) 125 150 0 100 300 500 600 700 200 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 800 Figure 5. On-Resistance Variation with Tempe...2800 Ciss 2400 VDS = 0 V 10000 VGS = 0 V TJ = 25C 1000 VGS = 0 V Ciss C, CAPACITANCE (pF) TJ =...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
File Size	155.71K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	P6KE18CA P6KE24A P6KE250CA P6KE250A P6KE18A P6KE27A P6KE180A P6KE6V8CA P6KE33A P6KE36A P6KE39CA P6KE200A P6KE7V5CA P6KE7V5A P6KE400A P6KE82CA P6KE82A
OCR Text	...A P6KE180CA P6KE200CA A 1000 500 10 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 V 5.8 6.4 8.55 V 6.45 7.13 9.5 typ note 4 10-4/C pF 5....2800 2300 1900 1600 1350 1250 1150 1075 1000 950 900 800 700 625 550 500 450 400 360 350 10.2 11....
Description	TRANSIL
File Size	173.72K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-24B
OCR Text	...TPUT CHARACTERISTICS (TYPICAL) 500 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=4...2800 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RE...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	83.90K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-24
OCR Text	... COLLECTOR CURRENT (TYPICAL) 500 COLLECTOR CURRENT IC (A) 400 DC CURRENT GAIN hFE IB=6.0A IB=3.0A 10 4 7 5 3 2 10 3 7 5 3 2 ...2800 2400 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.23K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-2HB
OCR Text	...TPUT CHARACTERISTICS (TYPICAL) 500 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=4...2800 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RE...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	83.89K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-2H
OCR Text	...TPUT CHARACTERISTICS (TYPICAL) 500 IB=4.0A IB=2.0A 400 IB=1.0A 300 IB=0.5A IB=0.2A 10 4 7 5 3 2 10 3 7 5 3 2 DC CURRENT GAIN VS. COLLECT...2800 2400 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	80.90K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-24B
OCR Text	... COLLECTOR CURRENT (TYPICAL) 500 Tj=25C COLLECTOR CURRENT IC (A) IB=400mA DC CURRENT GAIN hFE 400 IB=200mA IB=100mA 300 IB=...2800 2400 Irr (A), Qrr (c) 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	72.24K / 5 Page	View it Online	Download Datasheet

For 500-2800 Found Datasheets File :: 3672 Search Time::1.453ms
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