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Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF19030LSR3 MRF19030LR3
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| OCR Text |
...0 -50 5th Order -60 -70 -80 1.0 7th Order VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
591.35K /
8 Page |
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Motorola
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| Part No. |
MRF19030SR3 MRF19030R3
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| OCR Text |
...ng
3rd Order
5th Order
7th Order
-55 1.0
10 Pout, OUTPUT POWER (WATTS) PEP
100
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
15 14
Figure 6. Intermodulation Dis... |
| Description |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
446.17K /
8 Page |
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Motorola
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
...MHz 1 TWO-TONE SPACING (MHz) 10 7th Order 3rd Order Pout , OUTPUT POWER (dBm)
56 55 P3dB = 51.88 dBm (154.17 W) 54 53 52 51 50 49 48 34 35 36 37 VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8sec(on), 1msec(off) Center Frequency = 2140 MHz 38 3... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
200.55K /
12 Page |
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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF9210 MRF9210R3
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| OCR Text |
...POWER (WATTS) PEP 100 5th Order 7th Order 3rd Order VDD = 26 Vdc IDQ = 1900 mA f1 = 879.5 MHz, f2 = 880.05 MHz G ps , POWER GAIN (dB)
22 20 18 Gps 16 14 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 VDD = 26 Vdc IDQ = 1900 mA f = 880 M... |
| Description |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
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| File Size |
477.80K /
8 Page |
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http://
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| Part No. |
MW6IC1940NBR1
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| OCR Text |
...0 ma 250 ma 100 -- 6 0 -- 1 0 1 7th order p out , output power (watts) pep intermodulation d istortion (dbc) imd, v dd =28vdc,i dq1 = 200 ma, i dq2 = 440 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 5th order ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
835.17K /
17 Page |
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Renesas Electronics Corporation
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| Part No. |
CT40KM-8H05
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| OCR Text |
...sas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.9... |
| Description |
Nch IGBT for Strobe Flasher
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| File Size |
53.77K /
5 Page |
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it Online |
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Price and Availability
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