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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM1414-2L
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| OCR Text |
...y
Pout(dBm) VDS=9V
35
IDS0.85A Pin=27.0dBm
34
33
32
31
14.0
14.25
14.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
37
freq.=14.5GHz
36 35 34
VDS=9V IDS0.85A
70
Pout
60 50 40
Pout(... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
114.24K /
4 Page |
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http://
SSDI[Solid States Devices, Inc]
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| Part No. |
SFF80N10Z SFF80N10M
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| OCR Text |
... 30A, Tj= 200oC VGS = 10V, ID = 85A, Tj= 25oC VDS = VGS, ID = 250A VGS = 20V VDS = 80V, VGS = 0V, Tj = 25oC VDS = 80V, VGS = 0V, Tj = 125oC VDS = 80V, VGS = 0V, Tj = 200oC VDS = 15V, ID = 30A, Tj = 25oC VGS = 10V VDS = 50V ID = 85A VGS = 10... |
| Description |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET
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| File Size |
43.83K /
2 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL3402S
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| OCR Text |
...1
G S
Description
ID = 85A
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design... |
| Description |
HEXFET Power MOSFET
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| File Size |
152.33K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI85N06 FQB85N06 FQB85N06TMAM002
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| OCR Text |
...
TM
Features
* * * * * * * 85A, 60V, RDS(on) = 0.010 @VGS = 10 V Low gate charge ( typically 86 nC) Low Crss ( typically 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
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| Description |
60V N-Channel QFET
60V N-Channel MOSFET
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| File Size |
652.97K /
9 Page |
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it Online |
Download Datasheet |
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VISHAY SEMICONDUCTORS
IRF[International Rectifier]
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| Part No. |
85EPS12J 85EPS 85EPS08 85EPS08J 85EPS12
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| OCR Text |
85A = 1400A
VRRM 800 and 1200V
Major Ratings and Characteristics Characteristics
IF(AV) Sine waveform @ TC = 95 C IF(RMS) VRRM range IFSM VF TJ @ 85A, TJ = 25C range
(*)
Description/ Features Units
A A V A V C The 85EPS.. rectifie... |
| Description |
85 A, 1200 V, SILICON, RECTIFIER DIODE
800V5A条性病。恢复二极管在PowIRtab（短）封
INPUT RECTIFIER DIODE
800V 85A Std. Recovery Diode in a PowIRtab (Short)package
1200V 85A Std. Recovery Diode in a PowIRtabpackage
1200V 85A Std. Recovery Diode in a PowIRtab (Short)package
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| File Size |
119.33K /
6 Page |
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it Online |
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FUJI ELECTRIC CO LTD
FUJI[Fuji Electric]
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| Part No. |
2SK3698-01
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| OCR Text |
...720V VGS=0V VGS=30V VDS=0V ID=1.85A VGS=10V ID=1.85A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=1.85A VGS=10V RGS=10 VCC=450V ID=3.7A VGS=10V L=22.9mH Tch=25C IF=3.7A VGS=0V Tch=25C IF=3.7A VGS=0V -di/dt=100A/s Tch=25C
Min.
900 3.0
T... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
100.56K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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