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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text fet High Speed Power Switching aDE-208-634a (Z) 2nd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.017 typ. * Low drive cur...a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy C...
Description Silicon P Channel MOS fet High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text fet High Speed Switching aDE-208-739B (Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS = 1.1 typ. (VGS = -10 V , I D = -150...a ma mW C C 1. PW 10 s, duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) ...
Description Silicon P Channel MOS fet High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text fet High Speed Switching aDE-208-740B (Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 ...a a V mS pF pF pF ns ns ns ns Test Conditions I D = -100 a, VGS = 0 I G = 100 a, VDS = 0 VGS = 16 ...
Description Silicon P Channel MOS fet High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text fet High Speed Switching aDE-208-741B (Z) 3rd.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 ...a a V mS pF pF pF ns ns ns ns Test Conditions I D = -100 a, VGS = 0 I G = 100 a, VDS = 0 VGS = 16 ...
Description Silicon P Channel MOS fet High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text fet High Speed Switching aDE-208-771a (Z) 2nd.Edition. June 1999 Features * Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 m...a a V mS pF pF pF ns ns ns ns Test Conditions I D = -100 a, VGS = 0 I G = 100 a, VDS = 0 VGS = 8 V...
Description Silicon P Channel MOS fet High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text fet High Speed Switching aDE-208-801 (Z) 1st.Edition. June 1999 Features * Low on-resistance R DS = 8.5 typ. (VGS = -4 V , I D = -25 ma...a a V mS pF pF pF ns ns ns ns Test Conditions I D = -100 a, VGS = 0 I G = 100 a, VDS = 0 VGS = 8 V...
Description Silicon P Channel MOS fet High Speed Switching

File Size 38.71K  /  8 Page

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    2SJ588

HITACHI[Hitachi Semiconductor]
Part No. 2SJ588
OCR Text fet High Speed Switching aDE-208-802 (Z) 1st.Edition. June 1999 Features * Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 m...a a V mS pF pF pF ns ns ns ns Test Conditions I D = -100 a, VGS = 0 I G = 100 a, VDS = 0 VGS = 16 ...
Description Silicon P Channel MOS fet High Speed Switching

File Size 25.19K  /  5 Page

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    2SJ76 2SJ77 2SJ78 2SJ79

HITACHI[Hitachi Semiconductor]
Part No. 2SJ76 2SJ77 2SJ78 2SJ79
OCR Text fet application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK...a, VDS = 0 I D = -10 ma, VDS = -10 V*1 I D = -10 ma, VGD = 0 *1 I D = -10 ma, VDS = -20 V*1 VDS = -1...
Description Silicon P-Channel MOS fet

File Size 32.97K  /  6 Page

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    2SK1056 2SK1057 2SK1058

HITACHI[Hitachi Semiconductor]
Part No. 2SK1056 2SK1057 2SK1058
OCR Text fet application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features * * * * * * * Good frequenc...a a W C C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25C) Item Drain to so...
Description Silicon N Channel MOS fet
Silicon N-Channel MOS fet

File Size 39.06K  /  8 Page

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    2SK1070

Hitachi Semiconductor
Part No. 2SK1070
OCR Text fet application Low frequency / High frequency amplifier Outline MPaK 3 1 2 1. Drain 2. Source 3. Gate 2SK1070 absolute Ma...a, VDS = 0 VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 a VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5...
Description    Silicon N-Channel Junction fet

File Size 23.19K  /  5 Page

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