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  fiwld effect transistor silico Datasheet PDF File

For fiwld effect transistor silico Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    MTH8N90

MOTOROLA[Motorola, Inc]
Part No. MTH8N90
Description transistor,MOSFET,N-CHANNEL,900V V(BR)DSS,8A I(D),TO-218AC
POWER FIELD effect transistor N-CHANNEL ENHANCEMENT-MODE silicoN GATE TMOS

File Size 394.62K  /  6 Page

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    2SK3563

Toshiba, Corp.
Toshiba Semiconductor
Part No. 2SK3563
Description TOSHIBA Field effect transistor silicon N Channel MOS Type (PIE-MOS) 东芝场效应晶体管频道马鞍山类型(饼马鞍山?)
TOSHIBA Field effect transistor silicon N Channel MOS Type (PIE-MOS?)
TOSHIBA Field effect transistor silicon N Channel MOS Type (PIE-MOS4)

File Size 186.69K  /  3 Page

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    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF Power Field effect transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field effect transistor 60 W 860-960 MHz
LDMOS RF Power Field effect transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
Description 100V4A TMOS Power Field effect transistor (N-Channel Enhancement Mode silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field effect transistor N-Channel Enhancement-Mode silicon Gate

File Size 162.84K  /  8 Page

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    TOSHIBA
Part No. 2SJ201O 2SJ201
Description Field effect transistor silicon P Channel MOS Type High Power Amplifier Application
transistor | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR

File Size 157.51K  /  4 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-effect transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field effect transistor (N-Channel Enhancement Mode silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field effect transistor N-Channel Enhancement-Mode silicon Gate

File Size 139.23K  /  6 Page

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    BUK9515-100A BUK9615-100A

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BUK9515-100A BUK9615-100A
Description TrenchMOS(TM) transistor Logic level FET
N-Channel Enhancement mode logic Level field-effect power transistor
TrenchMOS TM transistor

File Size 65.32K  /  9 Page

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    NDP6020P NDB6020P

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
Part No. NDP6020P NDB6020P
Description P-Channel Enhancement Mode Field effect transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field effect transistor

File Size 60.89K  /  6 Page

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    FDS9412

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FDS9412
Description    Single N-Channel Enhancement Mode Field effect transistor
Single N-Channel Enhancement Mode Field effect transistor 7900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 229.41K  /  8 Page

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