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Matsshita / Panasonic
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Part No. |
XN5601 XN05601 0755
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OCR Text |
...r saturation voltage Transition frequency Collector output capacitance
G
Tr2
Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB ... |
Description |
Composite Transistors From old datasheet system
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File Size |
89.99K /
6 Page |
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Panasonic
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Part No. |
2SC2634
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OCR Text |
frequency and low-noise amplification Complementary to 2SA1127 Features
0.70.1
Unit: mm
5.00.2 4.00.2
0.70.2 12.90.5
* Low noise...fT NV Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 1 V, IC = 30 mA VCB = 1... |
Description |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
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File Size |
79.36K /
4 Page |
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PANASONIC CORP PANASONIC[Panasonic Semiconductor] http://
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Part No. |
2SC2634 2SA1127
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OCR Text |
frequency and low-noise amplification Complementary to 2SA1127
5.10.2
Unit: mm
5.00.2 4.00.2
s Features
q q
Low noise voltage NV...fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC ... |
Description |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
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File Size |
37.47K /
2 Page |
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Panasonic Industrial Solutions Matsshita / Panasonic
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Part No. |
2SC2634 2SC2634S 2SC2634R
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OCR Text |
frequency and low-noise amplification Complementary to 2SA1127
5.10.2
Unit: mm
5.00.2 4.00.2
s Features
q q
Low noise voltage NV...fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC ... |
Description |
TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 55V的五(巴西)总裁| 100mA的一(c)|2 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
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File Size |
47.68K /
3 Page |
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http:// NEC[NEC] NEC Corp.
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Part No. |
2SC5436
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OCR Text |
FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
* Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) * Contains same ch...fT (1) fT (2) |S21e|2 (1) |S21e|2 (2) NF (1) NF (2) TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC ... |
Description |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
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File Size |
75.26K /
12 Page |
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Price and Availability
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