| |
|
 |
Renesas Electronics Corporation
|
| Part No. |
NP55N055SDG NP55N055SDG-15
|
| OCR Text |
...ge range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electron...avalanche current note2 i ar 27 a repetitive avalanche energy note2 e ar 73 mj notes 1. ... |
| Description |
55 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
SWITCHING N-CHANNEL POWER MOS FET
|
| File Size |
277.10K /
9 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Microsemi
|
| Part No. |
APTM50HM75SCTG
|
| OCR Text |
... forward voltage i f = 50a v ge = 0v t j = 25c 1.6 2 v t j = 150c 1.5 t rr reverse recovery time i f = 50a v r = 300v di/dt =1800a/s t j = 25c 100 ns t j = 150c 150 q rr reverse recovery charge t... |
| Description |
Full Bridge Series And Parallel Diodes
|
| File Size |
672.55K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
hitachi
|
| Part No. |
2SK3140
|
| OCR Text |
...haracteristics
V CE (V)
V GE (V)
100
I D = 60 A V GS VDD = 50 V 25 V 10 V
20
1000 500
Switching Characteristics t d(off...Avalanche Energy E AR (mJ) 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Maximum Avalanche Energ... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
|
| File Size |
57.68K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Infineon
|
| Part No. |
BUZ100S-4
|
| OCR Text |
...65
18 A
k tot = 2W ji P h ge fd
VGS [V] 4.0 ca b 4.5
c 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.055
a
ID
14 12 10 8...Avalanche energy EAS = (Tj) parameter: ID = 8 A, VDD = 25 V RGS = 25 , L = 11.8 mH
400 mJ
Typ. g... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
|
| File Size |
89.37K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
