mil-std-202 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 91930 91930 HT82V737 LM358 SDA381EN CAT6221 0SJETT 0805C
	Product Description
	Full Text Search

mil-std-202 Datasheet PDF File

For mil-std-202 Found Datasheets File :: 22987 Search Time::1.656ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	... MAX UNIT C/W 0.62 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 7.07mH, R = 25, Peak I = 18.5A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cy...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5028BVR
OCR Text	... MAX UNIT C/W 0.50 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 4.8mH, R = 25, Peak I = 20A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 20A 0.280 Ohm
File Size	61.82K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5028SVR
OCR Text	... MAX UNIT C/W 0.50 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 4.8mH, R = 25, Peak I = 20A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle...
Description	POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	64.83K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	... MAX UNIT C/W 0.80 30 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 8.89mH, R = 25, Peak I = 14.7A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cy...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5032CVR
OCR Text	... MAX UNIT C/W 0.83 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 9.80mH, R = 25, Peak I = 14A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycl...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 14A 0.320 Ohm
File Size	60.85K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M38JFLL
OCR Text	...Case Junction to Ambient 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = .87mH, R j MIN TYP MAX UNIT C/W 0.17 40 G 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.39K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50M38JLL
OCR Text	... MAX UNIT C/W 0.17 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 0.87mH, R = 25W, Peak I = 91A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.38K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text	...380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.27mH, R = 25W, Peak I = 71A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50M50JLC APT5010JLC
OCR Text	... MAX UNIT C/W 0.18 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25W, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cyc...
Description	POWER MOS VI 500V 77A 0.050 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Reserves the right to change, withou...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

For mil-std-202 Found Datasheets File :: 22987 Search Time::1.656ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |