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mos-transistors Datasheet PDF File

For mos-transistors Found Datasheets File :: 2625 Search Time::2.922ms
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				Supertex, Inc. SUTEX[Supertex, Inc] Supertex Inc
Part No.	VP0104 VP0104N3 VP0106 VP0106N3 VP0109 VP0109N3 VP0109ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) SGD Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain...
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	39.98K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VP0550 VP0550N3
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	441.50K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	VP0808 VP0808L
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-G...
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	428.22K / 2 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc]
Part No.	VP3203 VP3203N3 VP3203N8 VP3203ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-...
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	452.25K / 4 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	AU2901 AU2901D AU2901N
OCR Text	...01 will directly interface with MOS logic where their low power drain is a distinct advantage over standard comparators. PIN CONFIGURATIO...transistors becoming forward biased and thereby acting as input diode clamps. In addition to this di...
Description	Quad voltage comparator
File Size	103.03K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	AU2903 AU2903D AU2903N
OCR Text	... compatible with TTL, DTL, ECL, MOS and CMOS logic systems - INPUT Q8 Q7 Q5 Q6 supplies 1.0VDC, to 18VDC EQUIVALENT CIRCUIT V+ v...transistors becoming forward biased and thereby acting as input diode clamps. In addition to this di...
Description	Low power dual voltage comparator
File Size	99.98K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG11N120CND
OCR Text	...gn. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a...
Description	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	108.55K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG24N60D1D
OCR Text	...s Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tr...
Description	3.3V 36-mc CPLD 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode 24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
File Size	35.26K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG24N60D1
OCR Text	...s Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tr...
Description	24A/ 600V N-Channel IGBT 24A, 600V N-Channel IGBT
File Size	32.04K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text	...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a ...
Description	1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
File Size	175.79K / 8 Page	View it Online	Download Datasheet

For mos-transistors Found Datasheets File :: 2625 Search Time::2.922ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |