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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDPF16N50 FDP16N50
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OCR Text |
...hese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. T...limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter... |
Description |
500V N-Channel MOSFET
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File Size |
985.58K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
FDPF39N20 FDP39N20 FDP39N20_07 FDP39N2007
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OCR Text |
...hese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. T...limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter... |
Description |
200V N-Channel MOSFET 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
1,067.74K /
10 Page |
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it Online |
Download Datasheet |
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDPF55N06 FDP55N06
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OCR Text |
...hese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. T...limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RJS RJA Parameter The... |
Description |
60V N-Channel MOSFET
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File Size |
1,125.07K /
10 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
FLU10ZM
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OCR Text |
Power GaAs FET
FEATURES High Output Power: P1dB=29.5dBm(typ.) High Gain: G1dB=13.0dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Avai...LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Ha... |
Description |
L-Band Medium & High Power GaAs FET
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File Size |
231.32K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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