repetitive avalanche dv dt rat pdf Datasheet P12 Description --- IC-ON-LINE


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repetitive avalanche dv dt rat Datasheet PDF File

For repetitive avalanche dv dt rat Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				HIROSE[Hirose Electric] Hirose Electric USA, INC.
Part No.	HD-02103AST
Description	Stick Coupler SCR Thyristor; Thyristor Type:Sensitive Gate; Peak repetitive Off-State Voltage, Vdrm:60V; On-State RMS Current, IT(rms):800mA; Peak Non repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA
File Size	57.74K / 3 Page	View it Online	Download Datasheet

				TOREX[Torex Semiconductor] TOREX SEMICONDUCTOR LTD.
Part No.	XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351PL XC6383A351PR XC6383C351ML XC6383C351MR XC6383C351PR XC6383F351PR XC6383 XC6383B351ML XC6383B351PL XC6383B351PR XC6383D351ML XC6383D351MR XC6383D351PL XC6383D351PR XC6383E351ML XC6383E351MR XC6383E351PL XC6383E351PR XC6383F351ML XC6383F351MR XC6383F351PL XC6383B351MR
Description	Hall Effect IC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes LEAD FREE EXT TEMP A2982 20L SOIC XC6383 Standard Recovery Rectifier; repetitive Reverse Voltage Max, Vrrm:50V; Forward Current Avg Rectified, IF(AV):1A; Non repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41; Current rating:1A 50V 1A 1N4001 (DO-41)
File Size	117.83K / 2 Page	View it Online	Download Datasheet

				Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.
Part No.	BD825-16 BD827-10 BD827-6 BD829-6
Description	SCR Thyristor; SCR Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1.5A I(C) \| TO-202 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1.5AI（丙）\|02 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-202 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一（c）\|202
File Size	205.03K / 5 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BYD13 BYD13D BYD13G BYD13J BYD13K BYD13M BYD13_1 BYD13M/A52R
Description	DIODE CONTROLLED avalanche Controlled avalanche rectifiers From old datasheet system
File Size	39.14K / 7 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
Description	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
File Size	23.18K / 2 Page	View it Online	Download Datasheet


Part No.	STK16C68-W20 STK16C68-W45 STK16C68-W25 STK16C68-S35 STK16C68-S25
Description	NVRAM (EEPROM Based) SCR Thyristor; SCR Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA 8K X 8 NON-VOLATILE SRAM, 35 ns, PDSO28 8K X 8 NON-VOLATILE SRAM, 25 ns, PDSO28
File Size	94.94K / 9 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	SC261 SC260 SC2603 SC260D SC260M SC260M3 SC261B SC261D SC261M
Description	Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 200 V. Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 600 V. Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 400 V. Triacs Bidirectional Triode Thyristors
File Size	90.74K / 2 Page	View it Online	Download Datasheet


Part No.	BD55 BD212 BD512 BS515
Description	Triac; Triac Type:Alternistor; Peak repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:8A; Gate Trigger Current Max, Igt:10mA Transient Surge Protection Thyristor; Package/Case:DO-214AA; repetitive Reverse Voltage Max, Vrrm:75V; Capacitance:100pF; Holding Current:50mA Triac; Triac Type:Alternistor; Peak repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA Analog IC
File Size	258.68K / 2 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation] Microsemi, Corp. Belden, Inc.
Part No.	1N5532 1N5535 1N5534 1N5524 1N5546 1N5518 1N5518-1 1N5521 1N5522 1N5523 1N5525 1N5526 1N5527 1N5528 1N5529 1N5530 1N5531 1N5533 1N5536 1N5537 1N5538 1N5539 1N5540 1N5541 1N5542 1N5543 1N5544 1N5545 1N5527BDO35 1N5520BDO35 1N5526BDO35 1N5519BDO35 1N5522BDO35 1N5520 1N5533BBUR-1
Description	LOW VOLTAGE avalanche DIODES DO-35 Low Voltage avalanche Zener 3.6 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Low Voltage avalanche Zener 低压雪崩
File Size	81.64K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTY64N055T IXTP64N055T
Description	N-Channel Enhancement Mode avalanche rated TrenchMV Power MOSFET N-Channel EngancementMode avalanche rated
File Size	166.10K / 5 Page	View it Online	Download Datasheet

For repetitive avalanche dv dt rat Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

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