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  transistors.collector-emitter Datasheet PDF File

For transistors.collector-emitter Found Datasheets File :: 21279    Search Time::5.36ms    
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    2SD2136

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2136
OCR Text Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.50.2 Unit: mm 4.50...collector-emitter saturation voltage VCE(sat) * Allowing supply with the radial taping 10.80.2 ...
Description Silicon NPN triple diffusion planar type

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 ...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A U...collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping (TC=25C) Ra...
Description Silicon NPN triple diffusion planar type(For power amplification)

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138...Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj T...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and ...Collector to base voltage Collector to C1.0 emitter voltage 2SD2138A Emitter to base voltage P...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SD2139

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2139
OCR Text Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s F...Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector curren...
Description Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

File Size 49.15K  /  3 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of...COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain t...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ...features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of...COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain t...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

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    HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text ...features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of...Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    HGTG20N60A4 HGTP20N60A4

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG20N60A4 HGTP20N60A4
OCR Text ...features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of...COLLECTOR (FLANGE) E NOTE: When ordering, use the entire part number. C G Symbol C J...
Description 600V, SMPS Series N-Channel IGBTs

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