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For -to-220 Found Datasheets File :: 81917 Search Time::3.25ms
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				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...00 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) ...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...ERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) INTERN...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...technology. Applications:* d.c. to d.c. converters * switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventiona...220 SOT78 E P A A1 q D1 D L2(1) L1 Q L b1 1 2 3 b c e e 0...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...gy has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in ...220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited International Rectifier SEME-LAB[Seme LAB]
Part No.	IRF9240 IRF9240-SMD
OCR Text	...1) 7.92 (0.312) 12.70 (0.50) TO-3 Package Pin 1 - Gate Pin 2 - Source 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3...220 SM -- TO-220 Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless other...
Description	CAP CER 250VAC 150PF X7R 1808 P-CHANNEL POWER MOSFET
File Size	25.33K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	...5 2.75 * HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS TO-220M - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE ABSOLUTE...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 package is universally preferred for all commercial-industrial applications at power dissipation...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (tu...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

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