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INTERSIL[Intersil Corporation]
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Part No. |
HA9P5340-5 HA-5340 HA-5340_03 HA-534003
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OCR Text |
...tures
* Fast Acquisition Time (0.01%) . . . . . . . . . . . . . . . . . 700ns * Fast Hold Mode Settling Time (0.01%) . . . . . . . . . . 200ns * Low Distortion (Hold Mode) . . . . . . . . . . . . . . . . . . -72dBc (VIN = 200kHz, fS = 450k... |
Description |
700ns, Low Distortion, Precision Sample and Hold Amplifier
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File Size |
407.93K /
10 Page |
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HITACHI[Hitachi Semiconductor]
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Part No. |
HAF2002
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OCR Text |
... type shut-down operation (Need 0 voltage recovery)
Outline
TO-220FM
D
G
Gate resistor
Tempe- rature Sencing Circuit
Latch Circuit
Gate Shut- down Circuit
12 S
3
1. Gate 2. Drain 3. Source
HAF2002
Absolute M... |
Description |
Silicon N Channel MOS FET Series Power Switching
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File Size |
37.32K /
7 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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Part No. |
HAF2011S HAF2011 HAF2011L
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OCR Text |
... type shut-down operation (Need 0 voltage recovery)
Outline
LDPAK
D
4 G
4
Gate resistor
Tempe- rature Sencing Circuit
Latch Circuit
Gate Shut- down Circuit
1 1
2
3
2
3
S
1. Gate 2. Drain 3. Source 4... |
Description |
Silicon N Channel MOS FET Series Power Switching
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File Size |
33.66K /
6 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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Part No. |
HAF2011S HAF2011 HAF2011L
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OCR Text |
... type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4 1. Gate 2. Drain 3. Source 4. Drain 2 3... |
Description |
Silicon N Channel MOS FET Series Power Switching
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File Size |
113.81K /
9 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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Part No. |
HAF2012S HAF2012 HAF2012L
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OCR Text |
... type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4 1. Gate 2. Drain 3. Source 4. Drain 2 3... |
Description |
Silicon N Channel MOS FET Series Power Switching
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File Size |
121.27K /
10 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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Part No. |
HAF2015RJ
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OCR Text |
...te1
Ratings 60 16 -2.5 2 4 2 0.54 25 2 1.5 150 -55 to +150
Unit V V V A A A A mJ W W C C
EAR
Pch Pch Tch
Tstg
PW 10 s, duty cycle 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6mm), PW 10s 2 ... |
Description |
Thermal MOS FETs SILICON N CHANNEL MOS FET SERIES POWER SWITCHING
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File Size |
57.86K /
10 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
HAF70009
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OCR Text |
0.025 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outs... |
Description |
56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
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File Size |
107.10K /
10 Page |
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it Online |
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Price and Availability
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