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2MXXX BR304 925BT3 HD6417 H11F2 BZX84C28 74LS55 65LVDS
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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...DIMENSIONS in millimeters 2.1 0.2 0.3 +0.1 -0.05 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) 1 4 0.4 +0.1 -0.05 2SC5015-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) faceto perforation s...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ... -- -- -- -- Max 10 100 10 -- 5.0 V Unit A A A Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 mA I C = 10 mA, IB = 2 mA 2 2SC5022 Collector Power Dissipation vs. Ambient Temperature 4 C...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5026

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5026
OCR Text ... 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the...
Description Silicon NPN epitaxial planer type(For low-frequency output amplification)

File Size 36.23K  /  2 Page

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ....10.2 8.00.2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulat...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...tings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 Parameter Collector to base voltage Colle...1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter T...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ... C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5036 2SC5036A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5036 2SC5036A
OCR Text ...ngs 900 1000 900 1000 800 7 2 1 0.3 30 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5036 2SC5036A 2SC5036 Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25C PC Tj ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.72K  /  3 Page

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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ...IC IB Ta=25C PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5037A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ... gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5050 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter volta...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ...| PG NF Min 15 -- -- -- 50 -- 8.0 -- 11.5 -- Typ -- -- -- -- 120 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V,...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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