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For 0.21a Found Datasheets File :: 1118 Search Time::1.203ms
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				ADPOW[Advanced Power Technology]
Part No.	APT6030SVFR APT6030BVFR APT6030BVFR_05 APT6030BVFR05
OCR Text	0.300 POWER MOS V(R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techn...21A @ 25C VGS = 15V VDD = 300V ID = 21A @ 25C RG = 1.6 MIN TYP MAX UNIT 3750 430 160 150 18 60 12...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	136.00K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH7150 IRH4150 IRH8150 IRH3150 IRH7150-15
OCR Text	...on Level RDS(on) 100K Rads (Si) 0.065 300K Rads (Si) 0.065 600K Rads (Si) 0.065 1000K Rads (Si) 0.065 ID 34A 34A 34A 34A IRH7150 100V, N-...21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A VDS= 80V ,VGS=0V VDS = 80V, VGS...
Description	Simple Drive Requirements 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
File Size	272.58K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN4150 IRHN8150 JANSG2N7268U JANSR2N7268U
OCR Text	...on Level RDS(on) 100K Rads (Si) 0.065 300K Rads (Si) 0.065 600K Rads (Si) 0.065 1000K Rads (Si) 0.065 ID 34A 34A 34A 34A IRHN7150 JANSR2N...21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A VDS= 160V,VGS=0V VDS = 80V VGS ...
Description	100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
File Size	283.27K / 12 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology]
Part No.	APT6029SLL APT6029BLL APT6029BLL_04 APT6029BLLG
OCR Text	0.290 APT6029BLL APT6029SLL BLL D3PAK TO-247 POWER MOS 7 (R) R MOSFET Power MOS 7 is a new generation of low loss, high v...21A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 21A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 2...
Description	POWER MOS 7 MOSFETc Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	158.95K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6029SFLL APT6025BLL APT6025BLL_04 APT6025SLL APT6029BFLL APT6029BFLL_04 APT6029BFLL04
OCR Text	0.290 BFLL D3PAK TO-247 POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhan...21A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 21A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 2...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	159.68K / 5 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT43M60L APT43M60B2
OCR Text	0.16 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe de...21A VGS = VDS, ID = 2.5mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C APT43M60B2_L Typ 0.57 0.14 4 -1...
Description	N-Channel MOSFET
File Size	384.28K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
OCR Text	...eatures * 21A, 400V, rDS(ON) = 0.210 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakd...
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
File Size	76.16K / 8 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTB050P10E3 MTB050P10E3-0-UB-S
OCR Text	... package shipping mtb050p10e3-0-ub-s to-220 (pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton mt...21a, r g =25 (note 2) e as 221 mj repetitive avalanche energy@ l=0.1mh ...
Description	P-Channel Enhancement Mode Power MOSFET
File Size	274.18K / 8 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT6029SFLLG APT6029BFLLG
OCR Text	...pt6029bfll apt6029sfll 600v 21a 0.290 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly...
Description	FREDFETs
File Size	151.78K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4ZH70UD
OCR Text	...in. -- -- -- -- Typ. -- -- 0.44 6.0(0.21) Max. 0.36 0.69 -- -- Units C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3...21A I F = 84A I F = 42A I F = 21A 200 trr- (nC) Irr- ( A) 10 100 VR = 200 V T J...
Description	1200V Copack IGBT in a SMD-10 package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	231.41K / 10 Page	View it Online	Download Datasheet

For 0.21a Found Datasheets File :: 1118 Search Time::1.203ms
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