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For 0.6us Found Datasheets File :: 164    Search Time::3.984ms    
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    Samsung Electronic
Part No. M368L0914BT1
OCR Text 0.4 jan. 2001 184pin unbuffered dimm rev. 0.4 184pin unbuffered dimm spd specification(128mb b-die base) jan. 2001 revision 0.0 (december ...6us & self refresh 80h 13 primary ddr sdram width x16 10h 14 error checking ddr sdram data width n...
Description 8M x 64 DDR SDRAM 184pin DIMM based on 8Mx16 Serial Presence Detect

File Size 21.39K  /  3 Page

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    Samsung Electronic
Part No. M368L1714DT1
OCR Text 0.0 sep. 2001 128mb ddr sdram module unbuffered 184pin dimm (16mx64(8mx16*2bank) based on 8mx16 ddr sdram) 64-bit non-ecc/parity revision 0....6us refresh interval(4k/64ms refresh) ? serial presence detect with eeprom ? pcb : height 1450 ...
Description 16Mx64 DDR SDRAM 184pin DIMM based on 8Mx16 Data Sheet

File Size 94.60K  /  16 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0
OCR Text 0.2 may.2002 184pin unbuffered ddr sdram module 256mb ddr sdram module unbuffered 184pin dimm (32mx64(16mx64*2 bank) based on 16mx8 ddr sdra...6us refresh interval(4k/64ms refresh) ? serial presence detect with eeprom ? pcb : height 1250 ...
Description 256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)

File Size 89.75K  /  12 Page

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    优先(苏州)半导体有限公
Part No. ES29BDS160DT-90RTGI ES29BDS160ET-90RTGI ES29BDS320ET-90RTGI ES29BDS160FT-70TGI ES29BDS320DT-90RTGI ES29BDS400DB-70TGI ES29BDS400E-90RWCI ES29BDS400FB-70RWCI ES29BDS400FT-70RWCI -ES29DL320DT-90RTGI -ES29DL320FT-70TGI -ES29DL400DB-70TGI -ES29BDS640FT-70TGI -ES29BDS800FT-70TGI -ES29BDS160DT-90RTGI
OCR Text ...4mbit(512kx 8/256k x 16) cmos 3.0 volt-only, boot sector flash memory general features ? single power supply operation - 2.7v -3.6v for ...6us/byte, 8us/word ( typical ) - sector erase time : 0.7sec/sector ( typical ) ? power consumpti...
Description 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

File Size 697.35K  /  51 Page

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    优先(苏州)半导体有限公
Part No. ES29BDS160DT-90TGI ES29BDS160ET-90TGI ES29BDS320FB-90TGI ES29BDS400ET-70WC ES29BDS160D-70WC ES29BDS160ET-70WC ES29BDS320DT-90TGI ES29BDS320ET-90TGI -ES29DL320FT-70WC
OCR Text ...e 16mbit(2m x 8/1m x 16) cmos 3.0 volt-only, boot sector flash memory general features ? single power supply operation - 2.7v -3.6v for ...6us/byte, 8us/word ( typical ) - sector erase time : 0.7sec/sector ( typical ) ? power consumpti...
Description 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

File Size 719.27K  /  53 Page

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    ADT6610

ADtech
Part No. ADT6610
OCR Text ...n history version contents date 0.0 -. first version 2011. 8. 25 www.datasheet.co.kr datasheet pdf - http://www.datasheet4u.net/ aug. 25...6us stsel =1 : 1.5ms strobe no occurs stsel =0 : 20us stsel =1 : 5ms strobe occurs margin perio...
Description 3-CH Constant current LED sink driver

File Size 329.57K  /  21 Page

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    IBM Microeletronics
Part No. IBM11N8645H
OCR Text ....3v) compatible ? single 3.3v 0.3v power supply ? gold contacts ? optimized for byte-write non-parity, or ecc applications ? system perfor...6us 00 13 primary dram data width x8 08 14 error checking dram data width 8m x 64 n/a 00 8m x 72 x8...
Description 8M x 64 DRAM Module(8M x 64 动态RAM模块)

File Size 364.92K  /  31 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/LB3 K4H280438F-TC/LA2 K4H280838F-TC/LB0 K4H280438F-TC/LB0
OCR Text ...f-die revision history revision 0.0 (january, 2004) - target spec. release revision 0.1 (february, 2004) - modified dc current spec. re...6us refresh interval(4k/64ms refresh) ? maximum burst refresh cycle : 8 ? 66pin tsop ii package ord...
Description 128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%

File Size 208.51K  /  23 Page

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    Electronic Theatre Controls, Inc.
Part No. EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7F
OCR Text ...e clock edge ? single 3.3v 0.3v power supply ? lvttl compatible with multiplexed address ? programmable burst length (b/l) - 1, 2...6us) description the em488m1644vtb is synchronous dynamic random access memory (sdr...
Description 128Mb (2MBank16) Synchronous DRAM
128Mb (2MBank6) Synchronous DRAM 128Mb的(200万Bank6)同步DRAM
128Mb (2M??Bank??6) Synchronous DRAM

File Size 254.21K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4H280438F-UCA2 K4H280838F-UCA2 K4H280438F-UCB0 K4H280438F-UCA0 K4H280838F-UCB0 K4H280438F-ULA0 K4H280838F-ULB0 K4H280438F-UCB00
OCR Text 0 may 2004 66 tsop-ii with pb-free (rohs compliant) ddr sdram ddr sdram 128mb f-die (x4, x8) rev. 1.1 may. 2004 128mb f-die revision histo...6us refresh interval(4k/64ms refresh) ? maximum burst refresh cycle : 8 ? 66pin tsop ii pb-free p...
Description 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费(符合RoHS

File Size 299.74K  /  23 Page

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