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NEC, Corp.
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| Part No. |
PD23C32000L
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| OCR Text |
... 50 40 ns output hold time t oh 00ns output disable time t df 0 30 0 25 ns word, /byte access time t wb 140 120 ns remark t df is the time from inactivation of /ce or /oe, oe to high-impedance state output. ac test conditions input wavefor... |
| Description |
32M-Bit Mask-Programmble ROM(32M位掩膜可选ROM) 32兆位掩模可编程光盘（32兆位掩膜可选光盘）
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| File Size |
130.65K /
20 Page |
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it Online |
Download Datasheet
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MAXIM - Dallas Semiconductor
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| Part No. |
DS1330W
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| OCR Text |
...00 ns 3 address setup time t aw 00ns write recovery time t wr1 t wr2 5 20 5 20 ns 12 13 output high z from we t odw 35 35 ns 5 output active from we t oew 5 5 ns 5 data setup time t ds 40 60 ns 4 data hold time t dh1 t dh2 0 20 0 20 ns 12... |
| Description |
3.3V 256K Nonvolatile SRAM with Battery Monitor
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| File Size |
194.23K /
12 Page |
View
it Online |
Download Datasheet |
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MAXIM - Dallas Semiconductor
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| Part No. |
DS1350W
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| OCR Text |
...00 ns 3 address setup time t aw 00ns write recovery time t wr1 t wr2 5 20 5 20 ns 12 13 output high z from we t odw 35 35 ns 5 output active from we t oew 5 5 ns 5 data setup time t ds 40 60 ns 4 data hold time t dh1 t dh2 0 20 0 20 ns 12... |
| Description |
3.3V 4096K Nonvolatile SRAM with Battery Monitor
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| File Size |
251.23K /
12 Page |
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it Online |
Download Datasheet |
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Maxim Integrated Products, Inc.
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| Part No. |
DS2030Y DS2030Y-70 DS2030AB-100 DS2030AB-70
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| OCR Text |
...5 75 ns address setup time t aw 00ns t wr1 (note 4) 5 5 write recovery time t wr2 (note 5) 15 15 ns output high impedance from we t odw (note 2) 25 35 ns output active from we t oew (note 2) 5 5 ns data setup time t ds (note 6) 30 40 ns t... |
| Description |
Single-Piece 256kb Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PBGA256
Single-Piece 256kb Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PBGA256
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| File Size |
429.86K /
12 Page |
View
it Online |
Download Datasheet |
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MAXIM - Dallas Semiconductor
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| Part No. |
DS1250W
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| OCR Text |
...00 ns 3 address setup time t aw 00ns write recovery time t wr1 t wr2 5 20 5 20 ns 12 13 output high z from we t odw 35 35 ns 5 output active from we t oew 5 5 ns 5 data setup time t ds 40 60 ns 4 data hold time t dh1 t dh2 0 20 0 20 ns 12... |
| Description |
3.3V 4096k NV SRAM
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| File Size |
186.48K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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