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  100.55 Datasheet PDF File

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    2SB1180 2SB1180A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1180 2SB1180A
OCR Text ...in -60 -80 Typ E Max Unit V -100 -100 -2 10 000 -1.5 -2 mA V V MHz s s s A Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030...
Description Silicon PNP epitaxial planar type darlington

File Size 84.71K  /  4 Page

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ...hFE Min. -80 -80 -5 82 120 Typ. 100 100 25 Max. -1 -1 -0.4 390 390 Unit V V V A A V MHz MHz pF VCE=-5V, IE=50mA, f=30MHz VCE=-10V, IE=50mA, f=30MHz VCB=-10V, IE=0A, f=1MHz IC=-50A IC=-1mA IE=-50A VCB=-60V VEB=-4V IC/IB=-500mA/-50mA VCE=-3V,...
Description Power Transistor

File Size 78.57K  /  3 Page

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    2SB1189 2SB1238

Rohm
Part No. 2SB1189 2SB1238
OCR Text ... - 82 - - Typ. - - - - - -0.2 - 100 14 Max. - - - -0.5 -0.5 -0.4 390 - 20 Unit V V V A A V - MHz pF IC=-50A IC=-2mA IE=-50A VCB=-50V VEB=-4V IC/IB=-500mA/-50mA VCE/IC=-3V/-0.1A VCE=-10V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Conditions ...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Medium power transistor

File Size 50.25K  /  1 Page

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    2SB1207

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1207
OCR Text ... f = 1MHz min typ max -100 2.00.2 marking +0.2 0.45-0.1 s Absolute Maximum Ratings (Ta=25C) 15.60.5 Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with ...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

File Size 35.75K  /  2 Page

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    2SB1209

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1209
OCR Text ...g Ratings -400 -400 -5 -200 -100 1 150 -55 ~ +150 1cm2 Unit V V V mA mA W C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 EIAJ:SC-71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collec...
Description Silicon PNP triple diffusion planer type(For low-frequency amplification)

File Size 37.38K  /  2 Page

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    2SB561

HITACHI[Hitachi Semiconductor]
Part No. 2SB561
OCR Text ...1.0 -0.5 mA IB = 0 0.2 -100 0 50 100 Ambient Tmperature Ta (C) 150 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics -1,000 Collector current IC (mA) -300 -100 -30 Ta ...
Description Silicon PNP Epitaxial

File Size 29.37K  /  6 Page

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    2SB562

Hitachi Semiconductor
Part No. 2SB562
OCR Text ... -400 -3 -2 -200 -1 mA IB = 0 0 100 150 50 Ambient Temperature Ta (C) 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector Emitter Voltage VCE (V) -800 PC = 9 0. 0.8 -600 W 0.4 Typical Transfer Characteristics -1,000 Collector Current ...
Description Silicon PNP Epitaxial

File Size 29.50K  /  6 Page

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    2SB566 2SB566A 2SB566AK 2SB566K HITACHILTD.-2SB566AK

HITACHI[Hitachi Semiconductor]
Part No. 2SB566 2SB566A 2SB566AK 2SB566K HITACHILTD.-2SB566AK
OCR Text ... grouped by h FE1 as follows. C 100 to 200 2 2SB566(K), 2SB566A(K) Maximum Collector Dissipation Curve Area Safe Operation 60 Collector power dissipation PC (W) -10 -5 IC max (Continuous) Collector current IC (A) 40 -2 TC = 25C D ...
Description Silicon PNP Triple Diffused

File Size 32.51K  /  6 Page

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    2SB621 2SB621A 2SB0621 2SB0621A

Panasonic Semiconductor
Part No. 2SB621 2SB621A 2SB0621 2SB0621A
OCR Text ...0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 -1.0 -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA - 0.75 - 0.5 - 0.25 0 0 -2 -4 -6 -8 -10 Collector current IC (A) 0.8 -1.25 IB=-10mA -9mA - 0.8 - 0.6 - 0.4 ...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

File Size 46.34K  /  3 Page

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ... * High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm...55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector-to-Base Breakdown V...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

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