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  12.0-16.0 Datasheet PDF File

For 12.0-16.0 Found Datasheets File :: 287633    Search Time::6.36ms    
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    2SD467

HITACHI[Hitachi Semiconductor]
Part No. 2SD467
OCR Text ...yp -- -- -- -- -- 0.19 0.76 280 12 Max -- -- -- 1.0 240 0.5 1.0 -- -- Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test) Collector to emit...
Description Silicon NPN Epitaxial

File Size 29.20K  /  6 Page

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    2SD602 2SD602A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD602 2SD602A
OCR Text ...0 80 100 120 140 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 ...
Description Silicon NPN epitaxial planer type

File Size 38.99K  /  2 Page

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    2SD620 2SK620

PANASONIC[Panasonic Semiconductor]
Part No. 2SD620 2SK620
OCR Text ....0V 3.5V 3.0V 2.5V 0 2 4 6 8 10 12 20 40 20 10 0 0 20 40 60 80 100 120 140 160 0 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) Ciss, Coss, Crss ...
Description Silicon N-Channel MOS FET

File Size 35.23K  /  2 Page

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    2SD638 2SD639

PANASONIC[Panasonic Semiconductor]
Part No. 2SD638 2SD639
OCR Text ...300 200 100 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 1...
Description Silicon NPN epitaxial planer type(For medium-power general amplification)

File Size 39.03K  /  2 Page

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    2SD655

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SD655
OCR Text ....3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of...
Description Silicon NPN Epitaxial npn型硅外延

File Size 28.39K  /  6 Page

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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text ...0 120 140 160 0 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IB -- VBE 800 VCE=5V Ta=25C 700 100 120 IC -- VBE Collector to ...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

File Size 50.15K  /  3 Page

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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SD667 2SD667A
OCR Text ...Typ -- -- -- -- -- -- -- -- 140 12 Max -- -- -- 10 200 -- 1 1.5 -- -- V V MHz pF Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, I C = 150 mA*2 VCE = 5 V, I C = 500 mA*2 I...
Description Silicon NPN Epitaxial npn型硅外延
Silicon NPN Transistor

File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2SD669 2SD669A SD669
OCR Text ... 5 Unit: mm 8.0 0.5 0 12 3.1 +0.15 -0.1 3.7 0.7 11.0 0.5 2.7 0.4 12 0 2.3 0.3 120 1.1 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod -- -- 0.6...
Description Silicon NPN Epitaxial

File Size 35.10K  /  7 Page

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    2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D

Microsemi, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D
OCR Text ... = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ -- -- -- -- -- -- -- 350 1.6 -- 250 125 -- -- -- -- DC current transfer ratio hFE1* hFE2 Base to emitter voltage...
Description Silicon NPN Transistor
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|2VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
Silicon NPN Epitaxial
SMALL SIGNAL TRANSISTOR TO-92MOD, 3 PIN

File Size 30.52K  /  6 Page

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    2SD814 2SD814A 2SD0814

PANASONIC[Panasonic Semiconductor]
Part No. 2SD814 2SD814A 2SD0814
OCR Text ...0 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) ...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

File Size 36.51K  /  2 Page

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