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  15.645 Datasheet PDF File

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    TOSHIBA
Part No. 2SC5784
OCR Text ...: h fe = 400 to 1000 (i c = 0.15 a) low collector-emitter saturation voltage: v ce (sat) = 0.12 v (max) high-speed switching: t f...645 mm 2 ) electrical characteristics (ta 25c) characteristics symbol test condition...
Description Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications

File Size 118.77K  /  5 Page

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    STW10NK80Z

STMICROELECTRONICS
Part No. STW10NK80Z
OCR Text 15 15 stp10nk80zfp stp10nk80z - stw10nk80z n-channel 800v - 0.78 ? - 9a - to-220/fp-to-247 zener-protected supermesh tm mosfet general fea...645 6.4 20 ns c a electrical characteristics stp10nk80zfp - stp10nk80z - stw10nk80z 6/15 2.1 ele...
Description 9 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 425.90K  /  15 Page

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    HDJD-S831-QT333

AVAGO TECHNOLOGIES LIMITED
Part No. HDJD-S831-QT333
OCR Text ....28 0.21 0.41 0.52 V/(mW/cm2) 0.15 0.11 Conditions Ee = 0 3 3 15 15 Min. Typ. Max. 15 Unit mV V mA s s 6 Operating Conditions and Elec...645 nm[4] (Red Channel) GS:11 lP = 460 nm[1] (Blue Channel) Saturation Irradiance[5] GS:11 lP = 542 ...
Description Color Sensor Module

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    HDJD-S833-QT333

Avago Technologies Ltd.
AVAGO TECHNOLOGIES LIMITED
Part No. HDJD-S833-QT333
OCR Text ...0.32 0.28 Conditions Ee = 0 3 3 15 15 Min. Typ. Max. 15 Unit mV V mA s s 6 Operating Conditions and Electrical Requirements (cont'd.) ...645 nm[4] (Red Channel) GS:11 lP = 460 nm[1] (Blue Channel) Saturation Irradiance[5] GS:11 lP = 542 ...
Description Color Sensor Module

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    STF20NF20 STP20NF20 STD20NF20

STMicroelectronics N.V.
Part No. STF20NF20 STP20NF20 STD20NF20
OCR Text .... . . . . . . . . . . . . . . . 15 2/16 STD20NF20 - STF20NF20 - STP20NF20 Electrical ratings 1 Electrical ratings Table 1. ...645 1.137 0.151 0.116 12/16 STD20NF20 - STF20NF20 - STP20NF20 Package mechanical data TO...
Description N-channel 200V - 0.10-18A- DPAK/TO-220/TO-220FP Low gate charge STripFETPower MOSFET N沟道200 0.10 18A条,DPAK/TO-220/TO-220FP低栅极电荷STripFET⑩功率MOSFET
N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET?/a> Power MOSFET

File Size 483.33K  /  16 Page

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    STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 STGP3NB60K STGP3NB60KD STGP3NB60KDFP GB3NB60KD GP3NB60KDFP STGB3NB60K

STMicroelectronics N.V.
ST Microelectronics
Part No. STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 STGP3NB60K STGP3NB60KD STGP3NB60KDFP GB3NB60KD GP3NB60KDFP STGB3NB60K -GP3NB60KDFP
OCR Text ... 480 V, IC = 3 A RG = 10, VGE = 15 V VCC= 480 V, IC = 3 A RG=10 VGE = 15 V,Tj = 125C Vcc = 480 V, IC = 3 A, RGE = 10 , VGE = 15 V Tj = 25 C...645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.0...
Description N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT
(STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH
(STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT

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    2SC571306 2SC5713

Toshiba Semiconductor
Part No. 2SC571306 2SC5713
OCR Text ...turation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 50 ns (typ.) Industrial Applications Unit: mm Absolute Maximum Rati...645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/curr...
Description Silicon NPN Epitaxial Type High-Speed Switching Applications

File Size 134.02K  /  5 Page

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    ST Microelectronics
Part No. STP5NK50ZFP
OCR Text ... forward transconductance v ds =15 v , i d = 2.2 a 3.1 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance...645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data 9/14 s...
Description N-CHANNEL Power MOSFET

File Size 501.21K  /  14 Page

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    Intel Corp.
Intel, Corp.
Part No. MS28F016SA VS28F016SA
OCR Text .................................. 15 5.1.4 write protection via v pplk .................. 16 5.1.5 read/write performance........................645 e 4 revision history date of revision version description 06/09/97 -001 original version 12/02/9...
Description 16-Mbit (2 Mbit x 8) FlashFile Memory(16-M2 Mx 8) FlashFile 存储
16-Mbit (1 Mbit x 16) FlashFile Memory(16-M1 Mx 16) FlashFile 存储 16兆位兆位× 16FlashFile内存6米位米位× 16FlashFile存储器)

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    2SC578406

Toshiba Semiconductor
Part No. 2SC578406
OCR Text ...gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (t...645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/curr...
Description Silicon NPN Epitaxial Type High-Speed Switching Applications

File Size 133.40K  /  5 Page

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