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150c Datasheet PDF File

For 150c Found Datasheets File :: 89514 Search Time::3.625ms
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				ONSEMI[ON Semiconductor]
Part No.	NTR0202PL_06 NTR0202PL NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G NTR0202PL06
OCR Text	...) (VDS = -20 V, VGS = 0 V, TJ = 150c) Gate-Body Leakage Current (VGS = 20 V, VDS = 0 V) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Temperature Coefficient) Static Drain-to-Source On-Resistance (V...
Description	Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package( -400mA, -20V，P通道，SOT3封装的功率MOSFET)
File Size	133.83K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] Infineon Technologies A...
Part No.	SGW15N60 SGB15N60 SGP15N60
OCR Text	...e operating area VCE 600V, Tj 150c Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature ...
Description	IGBTs & DuoPacks - 15A 600V TO247AC IGBT IGBTs & DuoPacks - 15A 600V TO263AB SMD IGBT Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology
File Size	411.41K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG] SIEMENS A G
Part No.	SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
OCR Text	... IC 20A VCE(sat) 2.4V Tj 150c Package TO-220AB TO-263AB TO-247AC Ordering Code Q67041-A4712-A2 Q67041-A4712-A4 Q67040-S4236 Symbol VCE IC Value 600 40 20 Unit V A Collector-emitter voltage DC collector current TC = ...
Description	Fast S-IGBT in NPT-technology Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技 Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
File Size	263.73K / 12 Page	View it Online	Download Datasheet

				Diotec Semiconductor AG DIOTEC[Diotec Semiconductor]
Part No.	SI-A8000_3600-1.8 SI-A1125 SI-A1125_500-6 SI-A1750_775-4 SI-A3000_1350-2.5 SI-A1125/500-6 SI-A8000/3600-1.8 SI-A3000/1350-2.5 SI-A1750/775-4
OCR Text	...gstemperatur Tj TS -50...+150c -50...+150c 1 2 SI-A and SI-E are identical devices - Si-A und SI-E sind identische Bauteile For one 50 Hz half sine-wave - Fur eine 50 Hz Sinus-Halbwelle http://www.diotec.com/ (c) Diotec Semic...
Description	High Voltage Si-Rectifier Modules Si-Hochspannungs-Gleichrichter Module 2.5 A, 8000 V, SILICON, RECTIFIER DIODE
File Size	82.99K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	... C Nominal load current 5) Tj < 150c, V IN = 10 V, TA = 85 C, SMD 1) Nominal load current 5) VIN = 10 V, VDS = 0.5 V, TC = 85 C, Tj < 150c Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, t m = 200 s ID(lim) 10 15 20 ID(ISO) 3....
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTLJF3117PTAG NTLJF3117P NTLJF3117PT1G
OCR Text	...KAGE (nA) 1.4 VGS = 0 V TJ = 150c 1000 1.2 1.0 100 TJ = 100C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS...
Description	Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
File Size	88.51K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB06N60HS
OCR Text	...gbt/ VCE 600V IC 6A Eoff 80J Tj 150c Marking K06N60HS Package P-TO-220-3-45 P-TO-220-3-45 G E Type SKB06N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Symbol VCE IC Value 60...
Description	High Speed IGBT in NPT-technology
File Size	353.14K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB15N60HS
OCR Text	...t/ VCE 600V IC 15A Eoff 200J Tj 150c Marking K15N60HS Package P-TO-220-3-45 P-TO-220-3-45 G E Type SKB15N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Symbol VCE IC Value 60...
Description	High Speed IGBT in NPT-technology
File Size	345.40K / 14 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STF33N60M2 STW33N60M2 STI33N60M2 STP33N60M2
OCR Text	...s(on) 10s 100s 1ms 10ms 0.01 tj=150c tc=25c single pulse 10 100 am17917v1 figure 4. safe operating area for i 2 pak and to-220 figure 5. thermal impedance for i 2 pak and to-220 figure 6. safe operating area for ...
Description	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
File Size	1,085.58K / 20 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AUIRG4BC30S-S AUIRG4BC30S-SL
OCR Text	... ? 1.45 ? i c = 18a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 6...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	301.87K / 13 Page	View it Online	Download Datasheet

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