| |
|
 |
Fairchild Semiconductor, Corp.
|
| Part No. |
FGA50N100BNTDTU
|
| OCR Text |
...covery time i f = 60a di/dt = 20 a/us 1.2 1.5 us i r instantaneous reverse current v rrm = 1000v -- 0.05 2 ua
www.fairchildsemi.com fga50n100bntd 10 00v, 50a npt-tren ch igbt co-pak fga50n100bntd rev. a 012345 0 20 40 60 80 10... |
| Description |
1000V, 50A NPT-Trench IGBT CO-PAK; Package: TO-3P; No of Pins: 3; Container: Rail 50 A, 1000 V, N-CHANNEL IGBT
|
| File Size |
792.84K /
9 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
International Rectifier
|
| Part No. |
IRF7311TR IRF7311TRPBF
|
| OCR Text |
...units drain-source voltage v ds 20 gate-source voltage v gs 12 t a = 25c 6.6 t a = 70c 5.3 pulsed drain current i dm 26 continuous sour...00v 3.50v 3.00v 2.70v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current... |
| Description |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
| File Size |
212.20K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
HIROSE ELECTRIC Co., Ltd.
|
| Part No. |
LM236H-5.0/NOPB
|
| OCR Text |
...akdown change t a =25?c, 6 12 6 20 mv with current 600 a i r 10 ma reverse dynamic impedance t a =25?c, i r =1 ma, f = 100 hz 0.6 1.2 0.6 2 ? temperature stability v r adjusted 5.00v (note 4) i r =1 ma, ( figure 2 ) 0?c t a 70?c (lm336-... |
| Description |
LM136-5.0 LM236-5.0 LM336-5.0 5.0V Reference Diode; Package: TO-46; No of Pins: 3; Qty per Container: 1000/Box 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 5 V, MBCY3
|
| File Size |
667.44K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
