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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC41V7177
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| OCR Text |
...
-60
S parameters
( Ta=25deg.C , VDS=10(V),IDS=3.4(A) ) S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) -131.000 0.066 172.000 -146.000 0.073 160.000 -161.000 0.079 146.000 -177.000 0.085 133.000 167.000 0.092 118.000 149.00... |
| Description |
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
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| File Size |
221.92K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V3436_04 MGFC42V3436 MGFC42V343604
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| OCR Text |
...e Storage temperature *1
(Ta=25deg.C) Ratings -15 -15 15 -40 84 78.9 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semi... |
| Description |
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
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| File Size |
188.52K /
2 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V3436
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| OCR Text |
... ID IGR IGF PT Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1
(Ta=25deg.C) Rating... |
| Description |
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
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| File Size |
141.04K /
2 Page |
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it Online |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V5258_04 MGFC42V5258 MGFC42V525804 MGFC42V525812
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| OCR Text |
...e Storage temperature *1
(Ta=25deg.C) Ratings -15 -15 15 -40 84 78.9 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semi... |
| Description |
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
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| File Size |
188.49K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45B3436B
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| OCR Text |
...8 (A) RG=12 (ohm)
GF-60
(Ta=25deg.C) Ratings -15 -10 10 78 175 -65 / +175 Unit V V A W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product... |
| Description |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
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| File Size |
412.57K /
6 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04
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| OCR Text |
... BIAS CONDITIONS
G F-38
(Ta=25deg.C)
(1 ) ga te (2 ) sou rce (fla ng e ) (3 )dra in
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse ... |
| Description |
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
216.25K /
3 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3436A
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| OCR Text |
...25 (ohm)
4 . 1
GF-38
(Ta=25deg.C) Ratings -15 -15 20 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
(1) gate (2) source(flange) (3)drain
< Keep safety first in your circuit designs! >
ABSOLUTE MAXIMUM RATINGS
Symbo... |
| Description |
3.4-3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
212.20K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04
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| OCR Text |
...ture Storage temperature
(Ta=25deg.C) Ratings -15 -15 25 -80 168 150 175 -65 / +175 Unit V V A mA mA W
G F-38
(1) gate (2) s ourc e(flange) (3)drain
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation pu... |
| Description |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
226.59K /
3 Page |
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it Online |
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http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V6472A_04 MGFC45V6472A MGFC45V6472A04
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| OCR Text |
...ET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
P1dB ,GLP vs. f 47
OUTPUT POWER P1dB (dBm)
Po , PAE vs. Pin
12
50 VDS=10(V) IDS=8(A) f=6.8(GHz) 45
OUTPUT POWER Po(dBm)
Po
50
VDS=10(V) IDS=8(A) 46
P1dB
11
40
POWER ADDED E... |
| Description |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
225.98K /
3 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V6472A C456472A
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| OCR Text |
...
TYPICAL CHARACTERISTICS (Ta=25deg.C)
P1dB ,GLP vs. f 47 OUTPUT POWER P1dB (dBm) VDS=10(V) IDS=8(A) 46
P1dB
Po , PAE vs. Pin 12 50 VDS=10(V) IDS=8(A) f=6.8(GHz) 45 OUTPUT POWER Po(dBm)
Po
50
11
40 POWER ADDED EFFICIECY PAE... |
| Description |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
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| File Size |
40.14K /
2 Page |
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it Online |
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