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4306D17 B3164 LBT09031 EF972012 INTEGRA TC35083P 073644 RC120
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  2ka Datasheet PDF File

For 2ka Found Datasheets File :: 256    Search Time::0.813ms    
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    IRF[International Rectifier]
Part No. IRG4CC71KB
OCR Text ... ) : IRG4PSC71K Cr-NiV-Ag ( 1kA-2ka-.2.5kA ) 99% Al, 1% Si (4 microns) 0.305" x 0.390" 150mm, with std. < 100 > flat .015" + / -.003" 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in d...
Description IRG4CC71KB IGBT Die in Wafer Form

File Size 75.92K  /  2 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IS9-1825ASRH_PROTO 5962F0251101QEC 5962F0251101QXC 5962F0251101VEC 5962F0251101VXC IS1-1825ASRH_PROTO IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q IS1-1825ASRH/PROTO IS9-1825ASRH/PROTO
OCR Text ...e: AlSiCu Thickness: 16.0kA +/- 2ka Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density:...
Description Single Event and Total Dose Hardened, High-Speed, Dual Output PWM SWITCHING CONTROLLER, 425 kHz SWITCHING FREQ-MAX, CDFP20
Single Event and Total Dose Hardened, High-Speed, Dual Output PWM 1 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, CDIP16

File Size 127.70K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. IS9-1845ASRH_PROTO 5962F0150901QPC 5962F0150901QXC 5962F0150901VPC 5962F0150901VXC IS1-1845ASRH_PROTO IS-1845ASRH IS7-1845ASRH_PROTO IS7-1845ASRH-8 IS7-1845ASRH-Q IS9-1845ASRH-8 IS9-1845ASRH-Q IS1-1845ASRH/PROTO IS7-1845ASRH/PROTO IS9-1845ASRH/PROTO IS-1.45ASRH
OCR Text ...Type: AlSiCu Thickness: 16.0kA 2ka Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <2....
Description High Speed Current Mode PWM, Single Event Rad-Hard
Single Event Radiation Hardened High Speed, Current Mode PWM

File Size 44.75K  /  2 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZMY20_02 ZMY20 ZMY20TA ZMY20TC ZMY2002
OCR Text ... disturbing field Hd allowed Hy 2ka/m TEST CONDITIONS TCS I - -0.1 - %/K Tamb= -25 to +125C ISSUE 2 - NOVEMBER 2002 SEMICONDUCTORS 2 ZMY20 Application 1 (digital output) Application 2 (analog output) ISS...
Description MAGNETIC FIELD SENSOR

File Size 155.17K  /  6 Page

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    ZMZ20

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZMZ20
OCR Text ...+125C T amb = -25 to +125C Hy = 2ka/m CONDITIONS ISSUE 2 - JANUARY 2004 SEMICONDUCTORS 2 ZMZ20 Application 1 (digital output) +Ub 22k 1M 4 10k 8 3 ZMZ20 1 10k 10k 10k 22k 10k GND 6 U1B 7 TL072 3+ 24 U1A 1 TL072 out 10k 5+ ...
Description MAGNETIC FIELD SENSORS

File Size 118.24K  /  6 Page

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    IRG4CC88KB

International Rectifier
Part No. IRG4CC88KB
OCR Text ... design ) : N/A Cr-NiV-Ag ( 1kA-2ka-2.5kA ) 99% Al, 1% Si (4 microns) .5705" x .5705" 150mm, with std. < 100 > flat .015" + / -.003" 01-5347 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original containe...
Description IRG4CC88KB IGBT Die in Wafer Form

File Size 40.72K  /  1 Page

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    IRG4CC81UB

International Rectifier
Part No. IRG4CC81UB
OCR Text ...: GA200TS60U Cr-Ni / V-Ag ( 1kA-2ka-.2.5kA ) 99% Al, 1% Si (4 microns) 0.523" x 0.523" 150mm, with std. < 100 > flat .015" + / -.003" 01-5249 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original contain...
Description IRG4CC81UB IGBT Die in Wafer Form

File Size 18.38K  /  1 Page

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    IRG4CC81KB IRG4CC40RB

International Rectifier
Part No. IRG4CC81KB IRG4CC40RB
OCR Text ... design ) : N/A Cr-NiV-Ag ( 1kA-2ka-2.5kA ) 99% Al, 1% Si (4 microns) .523" x .523" 150mm, with std. < 100 > flat .015" + / -.003" 01-5351 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container,...
Description TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form

File Size 41.01K  /  1 Page

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    H445CHXX

Hind Rectifiers Limited.
Part No. H445CHXX
OCR Text ...se voltage On-state current = 1.2ka 125 125 125 125 180 sine, 50H Z, TC = 690C 445 700 4.60 106 2.07 0.85 0.90 A A kA kA2S V V m TRIGGERING PARAMETERS IGT VGT IL PG-PEAK di/dt VFGM IFGM Gate trigger current Gate trigger voltage Latching ...
Description PHASE CONTROL THYRISTOR

File Size 87.90K  /  6 Page

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    H505CHXX

Hind Rectifiers Limited.
Part No. H505CHXX
OCR Text ...se voltage On-state current = 1.2ka 125 125 125 125 180 sine, 50H Z, TC = 650C 505 800 6.50 211 1.85 0.80 0.75 A A kA kA2S V V m TRIGGERING PARAMETERS IGT VGT IL PG-PEAK di/dt VFGM IFGM Gate trigger current Gate trigger voltage Latching ...
Description PHASE CONTROL THYRISTOR

File Size 87.76K  /  6 Page

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For 2ka Found Datasheets File :: 256    Search Time::0.813ms    
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