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For 5-1000 Found Datasheets File :: 172721 Search Time::2.656ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SC5022
OCR Text	...-- -- -- -- -- Max 10 100 10 -- 5.0 V Unit A A A Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = VEB = 6 V, IC = 0 VCE = 5 V, IC ...1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 C ms =1 s...
Description	Silicon NPN Triple Diffused
File Size	33.36K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5026
OCR Text	...e * (Ta=25C) Ratings 80 80 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VC...1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VC...
Description	Silicon NPN epitaxial planer type(For low-frequency output amplification)
File Size	36.23K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5032
OCR Text	....2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory...1000 VCE=5V 100 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	57.59K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5034
OCR Text	... Absolute Maximum Ratings +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-2...1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 10...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.16K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5035
OCR Text	...=25C) Ratings 800 800 500 8 10 5 3 40 2 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20.15 1.450....1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 10...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	61.01K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5036 2SC5036A
OCR Text	...5C PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5036A Collecto...1000 VCE=5V 100 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.72K / 3 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SC5037 2SC5037A
OCR Text	...Ratings 900 1000 900 1000 800 7 5 3 1 40 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5037A 2SC5037A 2SC5037A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25C PC...
Description	Silicon NPN triple diffusion planar type
File Size	62.18K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5050
OCR Text	...BO IC PC Tj Tstg Ratings 15 8 1.5 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to ba...1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This dev...
Description	Silicon NPN Epitaxial
File Size	23.65K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5051
OCR Text	... gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector ...1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This dev...
Description	Silicon NPN Epitaxial
File Size	23.89K / 5 Page	View it Online	Download Datasheet

				Rohm CO.,LTD.
Part No.	2SC5060 2SC5060TV2M
OCR Text	...ction for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) ...1000 - - - - - - - Typ. - - - - - - - 80 20 0.2 5 0.6 Max. 100 100 10 3 2500 1.5 2 - - - - - Unit V ...
Description	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power transistor (9010V, 3A) Power transistor (9010V/ 3A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	50.71K / 1 Page	View it Online	Download Datasheet

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