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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D5007UK
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| OCR Text |
...21.97 C 45 D 6.86 E 3.43 Dia. F 5.84 G 13.97 Dia. H 6.60 I 0.13 J 4.06 K 2.54 M 6.35
Tol. 0.13 0.13 5 0.13 0.13 0.13 0.13 REF 0.02 0.13 0...175MHz VDS = 50V VDS = 50V VDS = 50V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.7A... |
| Description |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED
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| File Size |
15.98K /
2 Page |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D5028UK
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| OCR Text |
5
4
E (4 pls) F I
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 50V - 175MHz PUSH-PULL
FEATURES
N
M
O
J
K
* SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1 GATE 2
DR
PIN... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
82.93K /
5 Page |
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ASI[Advanced Semiconductor]
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| Part No. |
DV2805
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| OCR Text |
...FEATURES:
* PG = 04 dB Typ. at 5.0 W /175MHz * 20-35 V operation * OmnigoldTM Metalization System
F
B
S G
C D E
D
O.125 NOM. FULL R J .125
S
MAXIMUM RATINGS
ID V(BR)DSS VDGR VGS PDISS TJ TSTG JC 0.5 A 80 V 80 V 20 V 1... |
| Description |
From old datasheet system
VHF POWER MOSFET N-Channel Enhancement Mode
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| File Size |
14.74K /
1 Page |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1005
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| OCR Text |
...N IN WATTS
8 8 10 12
10 0 5 10 15
VDS IN VOLTS
20
25
30
IV CURVE
F1B 4DIE IV CURVE
30
ID AND GM VS VGS
F1B 4 DIE GM & ID vs VGS
100
25
Id
20 10 15
10 1 5
Gm
0 0 2 4 6 8 10
Vds in Volts
12
14
... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.06K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ2210N50L IXZ210N50L
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| OCR Text |
...ings 500 500 20 30 10 60 16 TBD 5 >200
IXZ210N50L IXZ2210N50L
V V V V A A A mJ V/ns V/ns 940 470 10 0.16 0.29 W W W C/W C/W max. V
Features
150V (operating) 300 & 550 Watts 175MHz
PDC PDHS PDAMB RthJC RthJHS
Tc = 25C, Derate 6.0... |
| Description |
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
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| File Size |
245.17K /
9 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ308N120
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| OCR Text |
... 8 40 8 TBD V V V V A A A mJ
5 V/ns >200 V/ns
DRAIN
PDC PDHS PDAMB RthJC RthJHS
Tc = 25C, Derate 4.4W/C above 25C Tc = 25C
880 440 3.0
W W W
GATE
0.17 C/W 0.34 C/W
SG1
SG2
SD1
SD2
Features
min. VDSS VGS... |
| Description |
Z-MOS RF Power MOSFET
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| File Size |
143.79K /
3 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KB2502
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| OCR Text |
...
SDA SCL
Band Gap.Ref VREF
5
Multi (3 mode) Half Tone
RGB OSD FBL BLK INTE HT DET. CLP
BLK Int Clamp Pulse Gen.
R cut off G cut off
V/I V/I V/I
27 26 25
RCT GCT BCT
HFLB B cut off
ABL CONT_CAP
8 7
ABL
... |
| Description |
VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS
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| File Size |
718.59K /
62 Page |
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it Online |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KH560
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| OCR Text |
...
+ -
19
23
V-
18
5 21 10 15 20
-VCC
All undesignated pins are internally unconnected. May be grounded if desired.
Typi...175MHz overshoot 2V step maximally flat compensation 0% overshoot compensation EQUIVALENT INPUT NOIS... |
| Description |
Wideband/ Low Distortion Driver Amplifier
Wideband, Low Distortion Driver Amplifier
From old datasheet system
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| File Size |
177.65K /
13 Page |
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it Online |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KH561AM KH561 KH561AI
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| OCR Text |
...
+ -
19
23
V-
18
5 21 10 15 20
-VCC
All undesignated pins are internally unconnected. May be grounded if desired.
Typi...175MHz overshoot 2V step maximally flat compensation 0% overshoot compensation EQUIVALENT INPUT NOIS... |
| Description |
Wideband/ Low Distortion Driver Amplifier
Wideband, Low Distortion Driver Amplifier
From old datasheet system
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| File Size |
176.77K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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