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SHARP
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| Part No. |
LH28F040SUTD-Z4 LH28F016SUTD-Z4
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| OCR Text |
512K x 8) Flash Memory
TOP VIEW
* 512K x 8 Bit Configuration * 5 V Write/Erase Operation (5 V VPP, 3.3 VCC)
- VCC for Write/Erase at as low as 2.9 V
NC1 NC1 A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 NC2 NC2
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| Description |
4M (512K bb 8) Flash Memory
LH28F016SUT-Z4 5M (512K x 8) Flash Memory
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| File Size |
276.56K /
32 Page |
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Samsung Electronics
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| Part No. |
KM29N040IT KM29N040T
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| OCR Text |
512K x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 1.0 1.1 Data Sheet 1997. Data Sheet 1998. Data Sheet 1998.
Draft Date
April 10th 1997 April 10th 1998 July 14th 1998
Remark
Final
The... |
| Description |
Flash Memory
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| File Size |
293.80K /
21 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K5P2880YCM
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| OCR Text |
...t sram is organized as 1m x8 or 512k x16 bit. in 128mb nand flash a 528-byte page program can be typically achieved within 300us and an 16k-byte block erase can be typically achieved within 2ms. in serial read operation, a byte can be read ... |
| Description |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
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| File Size |
556.18K /
29 Page |
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WHITE ELECTRONIC DESIGNS CORP
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| Part No. |
8P001SRA1204I15
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| OCR Text |
....d15] [do..d7] i/o buffer sram 512k x 8 [a1..a11] nc nc + 2. pull up resistor (min 10k) notes: 1. pull down resistor (min 100k) + + sram ...bit is msb. higher order address bits are no connects (i.e., 1mb a19 is msb, a20 - a21 are nc). 3. ... |
| Description |
512K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68
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| File Size |
111.62K /
10 Page |
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Integrated Device Technology, Inc.
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| Part No. |
IDTIDT71P71804200BQ IDTIDT71P71804167BQ IDTIDT71P71604200BQ IDTIDT71P71604167BQ IDTIDT71P71604250BQ IDTIDT71P71804250BQ 71P71604S250BQG 71P71604S200BQG 71P71604S250BQG8 71P71604S200BQG8 71P71604S167BQG
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| OCR Text |
...1P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit) 18 Mb DDR II SRAM Burst of 2
Commercial Temperature Range
The K and K clocks are the primary device input clocks. The K clock is used to clock in the control signals (LD, R/W and B Wx), t... |
| Description |
512K X 36 DDR SRAM, 0.5 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165
512K X 36 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165
18Mb Pipelined DDR?II SRAM Burst of 2
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| File Size |
230.29K /
23 Page |
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Intel Corporation
Intel Corp.
Intel, Corp.
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| Part No. |
E28F004B5T60 E28F004B5T80 28F200B5 E28F400B5B60 E28F400B5B80 28F800B5 PA28F400B5T80 PA28F200B5T60 PA28F200B5T80 PA28F400B5T60 PA28F800B5T70 E28F800B5T70 E28F800B5T90 E28F800B5B90 TE28F800B5T90 E28F200B5B60 TE28F200B5T80 INTELCORP-PA28F400B5T80
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| OCR Text |
... 8-bit 60, 80 not available x8: 512K x 8 1 x 16 KB 2 x 8 KB 1 x 96 KB 3 x 128 KB Section 2.3, Figs. 4-7 Table 2 Section 5.6 Section 5.6
5...bit 8- or 16-bit 70, 90 80 90
60, 80
x8: 256K x 8 x8: 512K x 8 x8: 1M x 8 x16: 128K x 16 x16: ... |
| Description |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2/ 4/ 8 MBIT
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2 / 4 / 8 MBIT
Dual-Slot, PCMCIA Analog Power Controller
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 90 ns, PDSO48
DIRECTIONAL COUPLER, 20DB, SMT 256K X 8 FLASH 5V PROM, 70 ns, PDSO48
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 1M X 8 FLASH 5V PROM, 80 ns, PDSO48
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| File Size |
490.23K /
38 Page |
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Infineon Technologies AG
Amphenol Tuchel
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| Part No. |
PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E PUMA77F16006AI-90E PUMA77F16006AI-70 PUMA2F16006I-90 PUMA2F16006-120
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| OCR Text |
512k x 32 flash module elm road, west chirton industrial estate, north shields, ne29 8se, england. tel +44 (0191) 2930500. fax +44 (0191) ...bit wide. ? operating power 880/456/242mw (max). low power standby 33mw (max). ? automatic write/era... |
| Description |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
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| File Size |
366.34K /
25 Page |
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Price and Availability
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