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Renesas Electronics Corporation.
Renesas Electronics, Corp.
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| Part No. |
M38230G4-xxxFP M38230G4-xxxHP M38231G4-xxxHP M38232G4-xxxFP M38232G4-xxxHP M38233G4-xxxFP M38233G4-xxxHP M38234G4-xxxFP M38234G4-xxxHP M38235G4-xxxFP M38230G6-xxxFP M38230G6-xxxHP M38231G6-xxxFP M38231G6-xxxHP M38232G6-xxxFP M38232G6-xxxHP M38233G6-xxxFP M38233G6-xxxHP M38234G6-xxxFP M38234G6-xxxHP M38235G6-xxxFP M38235G6-xxxHP M38236G6-xxxHP M38237G6-xxxFP M38237G6-xxxHP M38238G6-xxxFP M38230G7-xxxFP M38230G7-xxxHP M38231G7-xxxFP M38231G7-xxxHP M38232G7-xxxFP M38232G7-xxxHP M38233G7-xxxFP M38233G7-xxxHP M38234G7-xxxFP M38234G7-xxxHP M38235G7-xxxFP M38235G7-xxxHP M38236G7-xxxFP M38236G7-xxxHP M38237G7-xxxFP M38237G7-xxxHP M38238G7-xxxFP M38238G7-xxxHP M38239G7-xxxFP M38239G7-xxxHP M38230G8-xxxFP M38230G8-xxxHP M38231G8-xxxFP M38231G8-xxxHP M38232G8-xxxFP M38232G8-xxxHP M38233G8-xxxFP M38233G8-xxxHP M38234G8-xxxFP M38234G8-xxxHP M38235G8-xxxFP M38235G8-xxxHP M38236G8-xxxFP M38236G8-xxxHP M38237G8-xxxFP M38237G8-xxxHP M38238G8-xxxFP M38238G8-xxxHP M38230GA-xxxFP M38230GA-xxxHP M38231GA-xxxFP M38231GA-xxxHP M38232GA-xxxFP M38232GA-xxxHP M38233GA-xxxFP M38233GA-xxxHP M38234GA-xxxFP M38234GA-xxxHP M38235GA-xxxFP M38235GA-xxxHP M38236GA-xxxFP M38236GA-xxxHP M38237GA-xxxFP M38237GA-xxxHP
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| Description |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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| File Size |
901.80K /
76 Page |
 View
it Online |
Download Datasheet
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International Business Machines, Corp.
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| Part No. |
IBM041813PPLB
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| Description |
64k x 18 BURST pipeline SRAM(1M (64k x 18)同步可猝发流水线式线式高性能静态RAM) 64k的x管道18的SRAM00万（64k的x 18）同步可猝发流水线式线式高性能静态内存）
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| File Size |
144.16K /
12 Page |
View
it Online |
Download Datasheet |
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Winbond Electronics Corp
Winbond Electronics, Corp.
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| Part No. |
W25Z040A
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| Description |
128K×36bit pipeline ZWS(Zero-Wait-State) SRAM(128K×36位无等待时间的管线CMOS同步静态RAM) 128K的36bit管道ZWS（零等待状态）的SRAM28K的36位无等待时间的管线的CMOS同步静态内存）
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| File Size |
137.56K /
16 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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