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  7.9ghz Datasheet PDF File

For 7.9ghz Found Datasheets File :: 771    Search Time::1.813ms    
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    MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX2411AEVKIT MAX2411A_1 MAX2411A MAX2411A1
OCR Text ...t.com http://www.t-yuden.com 7 220pF ceramic capacitors, 0805 size AVX Coilcraft Taiyo Yuden USA 6 1 0 1 1 4 1 2 3 0 2 1 1000...9GHz at a power level of -40dBm. 4) Connect a spectrum analyzer to the LNAOUT SMA connector on the E...
Description Evaluation Kit for the MAX2411A

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    NJG1602HE3

New Japan Radio
njr
Part No. NJG1602HE3
OCR Text ... 10 1 9 2 8 3 7 4 5 6 Pin connection 1. VDD 2. P1 3. GND 4. P2 5. GND 6. P3 7. GND 8. P4 9. GND 10.GND 11.GND ...9GHz, PIN=25dBm f=0.9GHz, PIN=25dBm f=1.9GHz, PIN=25dBm f=0.9GHz, PIN=25dBm f=1.9GHz, PIN=25dBm f=1....
Description DPDT SWITCH GaAs MMIC

File Size 286.12K  /  14 Page

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    Infineon
Part No. BFP640
OCR Text ...ff xtb = -1.42 - fc = 0.8 kf = 7.291e-11 titf2 1.0e-5 all parameters are ready to use, no scalling is necessary. extracted on behalf of inf...9ghz 1.8ghz 2.4ghz 3ghz 4ghz 5ghz 6ghz power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v...
Description Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA

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    Sanyo
Part No. 2SC4270
OCR Text ...in typ max 0.1 10 40* 1.5 3.0 0.7 0.45 12 3.0 1.0 200* Unit A A GHz pF pF dB dB * : The 2SC4270 is classified by 5mA hFE as follows : (Note) Marking : KT hFE rank : 2, 3, 4 Any and all SANYO products described or contained herei...
Description NPN Epitaxial Planar Silicon Transistor UHF Converter, Local Oscillator Applications
NPN Epitaxial Planar Silicon Transistors

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    SONY
Part No. CXG7002FN
OCR Text ...ch block> supply voltage v dd 2.7 to 3.3 v <power amplifier block> gain control voltage vp ctl to v dd ? 1.0 v <switch block>  control vol...9ghz by this capacitor (typ. 1nf). gnd pin external capacitor connection pin if amplifier distortion...
Description Power Amplifier, Switch and LNA/Mixer

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    HWL26NPB

Hexawave, Inc
Part No. HWL26NPB
OCR Text ...5V IDSS 1mA 150C -65 to +150C 0.7 W Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests Symbol IDSS VP Parameters & Condition...9GHz,Ids=110mA Po (dBm) 30 25 20 15 10 5 0 1 2 3 4 5 6 PAE (%) 60 50 40 30 20 10 0 Vds (V) Po PAE ...
Description L-Band GaAs Power FET

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    CXG7001FN

SONY[Sony Corporation]
Part No. CXG7001FN
OCR Text ... (H) * Control voltage (L) 2.7 to 3.3 V to VDD-1.0 V Notes on Handling GaAs MMICs are ESD sensitive devices. Special handling...9GHz by this capacitor (Typ. 13pF). GND. Connector for the external capacitor. IF AMP distortion is ...
Description Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS

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    CHM1481-QFG

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHM1481-QFG
OCR Text ...- 45 - 40 - 35 - 30 - 25 - 20 6 7 8 9 rf output power & lo leakage (dbm) rf frequency (ghz) rf output : usb rf output : lsb lo leakag withou...9ghz direct quadrature modulator ref. : dschm1481 - qfg1356 - 22 dec 11 2 / 10 specifica...
Description 6-9GHz Direct Quadrature Modulator
   6-9GHz Direct Quadrature Modulator

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ... Values typ. max. Unit fT 5 7 0.19 0.27 0.13 - GHz pF 0.35 dB 2.1 2.25 - IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacit...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 8V dB...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

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    HWL23NPB

Hexawave, Inc
Part No. HWL23NPB
OCR Text ...5V IDSS 1mA 150C -65 to +150C 0.7 Watt PB Package (SOT-23) Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests Symbol IDSS...9GHz,Ids=55mA Po (dBm) 22 20 40 18 16 10 14 1 2 3 4 5 6 0 Vds (V) 30 20 Po PAE PAE (%) 60 50 Out...
Description L-Band GaAS Power FET

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