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  80v 1.25a Datasheet PDF File

For 80v 1.25a Found Datasheets File :: 439    Search Time::5.188ms    
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    TY Semiconductor Co., Ltd
Part No. 2SK3480
OCR Text ...g =0 ,v dd =50v i d =50a, v dd =80v, v gs =10v draintosourceon-stateresistance smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
Description Super low on-state resistance: RDS(on)1 = 31 m MAX. Built-in gate protection diode

File Size 84.10K  /  1 Page

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    2SK3480

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SK3480
OCR Text ...g =0 ,v dd =50v i d =50a, v dd =80v, v gs =10v draintosourceon-stateresistance
Description MOS Field Effect Transistor

File Size 41.71K  /  1 Page

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    SW6501

Shenzhen Sunnyway Battery Tech Co.Ltd.
Part No. SW6501
OCR Text ...arge Table at 25 (77 ) Time 4.80v 5.10V 5.25V 5.40V 5.55V A W A W A W A W A W 5min 10min 15min 30min 1h 2h 3h 4h 5h 8h 10h 20h R 66
Description General Battery

File Size 354.42K  /  1 Page

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    FS50VS-2

Mitsubishi Electric Semiconductor
Part No. FS50VS-2
OCR Text ...12 60 TC = 125C 8 50V 80v 40 75C 25C 4 20 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE r...
Description HIGH-SPEED SWITCHING USE

File Size 37.99K  /  4 Page

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    FS50UMJ-2

Mitsubishi Electric Semiconductor
Part No. FS50UMJ-2
OCR Text ... 6 60 4 VDS = 20V 40V 80v 40 TC = 125C 75C 25C 2 20 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RE...
Description HIGH-SPEED SWITCHING USE

File Size 39.81K  /  4 Page

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    FS50VSJ-2

Mitsubishi Electric Semiconductor
Part No. FS50VSJ-2
OCR Text ... 6 60 4 VDS = 20V 40V 80v 40 TC = 125C 75C 25C 2 20 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RE...
Description HIGH-SPEED SWITCHING USE

File Size 38.52K  /  4 Page

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    FS50VSJ-2

Mitsubishi Electric Corporation
Powerex Power Semiconductors
Part No. FS50VSJ-2
OCR Text ... 6 60 4 VDS = 20V 40V 80v 40 TC = 125C 75C 25C 2 20 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RE...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.51K  /  4 Page

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    2SPT6341SD

Solid States Devices, Inc
Part No. 2SPT6341SD
OCR Text ... 10V, IE = 0A, f = 100kHz VCC = 80v, IC = 10A, IB1 = IB2 = 1A fT cob tr tS tf Min 4 -- -- -- -- Typ 6.5 220 60 2000 110 Max -- 300 ...1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 ...
Description MultiEpitaxial Planar NPN Power Transistor Die

File Size 75.09K  /  2 Page

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    2SK3589-0103

Fuji Electric
Part No. 2SK3589-0103
OCR Text ... dss v ds =100v v gs =0v v ds =80v v gs =0v v gs =30v i d =25a v gs =10v i d =25a v ds =25v v cc =48v i d =25a v gs =10v r gs =10...1.10 1.65 0.1 0.4 -55 to +150 outline drawings [mm] equivalent circuit schematic super f ap-g serie...
Description N-CHANNEL SILICON POWER MOSFET

File Size 90.63K  /  4 Page

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